Sahoo D, Priyadarshini P, Dandela R, Alagarasan D, Ganesan R, Varadharajaperumal S, Naik R
Department of Engineering and Material Physics, ICT-IOC Bhubaneswar 751013 India
Department of Industrial & Engineering Chemistry, ICT-IOC Bhubaneswar 751013 India.
RSC Adv. 2021 Apr 30;11(26):16015-16025. doi: 10.1039/d1ra02368c. eCollection 2021 Apr 26.
The photosensitivity of amorphous chalcogenide thin films brings out light-induced changes in the nonlinear and linear optical parameters upon sub-bandgap and bandgap laser irradiation. The present work reports the laser irradiated changes in the optical properties of AsSeSb thin films. The thermally evaporated film showed an exponential decrease in optical bandgap and increase in Urbach energy. The decay rate of the bandgap was 6.24 min and growth rate of Urbach energy was 6.67 min respectively. The dynamics of photo-induced changes were observed from the changes in linear refractive index and its dependent parameters such as 3 order nonlinear susceptibility, nonlinear refractive index, dispersion and dielectric parameters. The conversion of heteropolar to homopolar bonds induced the photodarkening mechanism that changed the dispersion parameters. The decrease in and reduced the oscillator strength along with the zero-frequency dielectric constant. The optical and electrical conductivity changed significantly with time. The changes were saturated with time which brings stability in the film properties that is useful for various optical applications. However, no structural and compositional changes upon laser irradiation were noticed from the X-ray diffraction and EDX studies respectively. The surface homogeneity was checked from the FESEM picture.
非晶硫属化物薄膜的光敏性会在亚带隙和带隙激光照射下引发非线性和线性光学参数的光致变化。本工作报道了AsSeSb薄膜在激光照射下的光学性质变化。热蒸发薄膜的光学带隙呈指数下降,乌尔巴赫能量增加。带隙的衰减率分别为6.24分钟,乌尔巴赫能量的增长率为6.67分钟。从线性折射率及其相关参数(如三阶非线性极化率、非线性折射率、色散和介电参数)的变化中观察到光致变化的动力学。异极键向同极键的转变引发了改变色散参数的光暗化机制。 和 的减小降低了振子强度以及零频率介电常数。光学和电导率随时间发生显著变化。这些变化随时间饱和,从而使薄膜性质具有稳定性,这对各种光学应用很有用。然而,分别通过X射线衍射和能谱分析研究未发现激光照射后薄膜的结构和成分发生变化。通过场发射扫描电子显微镜图像检查了表面均匀性。