Agarwal Surbhi, Dwivedi D K, Lohia Pooja, Gupta Manoj Kumar
Photonics and Photovoltaic Research Lab, Department of Physics and Material Science, Madan Mohan Malviya University of Technology Gorakhpur 273010 India
Department of Electronics and Communication Engineering, Madan Mohan Malviya University of Technology Gorakhpur 273010 India.
RSC Adv. 2024 Sep 19;14(41):29812-29826. doi: 10.1039/d4ra05458j. eCollection 2024 Sep 18.
Phase-change memory (PCM) relies on the characteristics of phase-change materials that exhibit slow resistance state changes and enable multilevel operation with minimal resistance drift. They are emerging as promising candidates for artificial intelligence applications inspired by neuroscience and require high volumes of data. However, achieving the necessary qualities, such as thermal stability and fast operation speed, simultaneously is still a major obstacle for PCM materials. The present study investigated the linear and nonlinear optical and electronic properties of Te(GeSe)Y ( = 0.05, 0.1, 0.15) thin films deposited a thermal evaporation technique by structural characterization (using XRD), surface morphology analysis (using SEM), and elemental composition analysis (using EDX). Transmission spectra ranging from 500 to 2500 nm were obtained using a UV-visible spectrophotometer to determine the optical properties. The refractive index () and extinction coefficient () were also determined, and Tauc's relationship was applied to assess the optical absorption data. The absorption coefficient () was determined utilizing the Urbach relation. The Wemple-DiDomenico model was employed to calculate the nonlinear refractive index. Furthermore, the dielectric properties, loss tangent, and surface/volume energy loss functions were determined. The optical energy bandgap of the thin films revealed the allowed indirect transitions. The observed enhancement of the optical parameters suggested that the investigated composition is appropriate for different photonic applications.
相变存储器（PCM）依赖于相变材料的特性，这些材料表现出缓慢的电阻状态变化，并能以最小的电阻漂移实现多级操作。它们正成为受神经科学启发的人工智能应用中有前景的候选材料，并且需要大量数据。然而，同时实现诸如热稳定性和快速运行速度等必要特性仍然是PCM材料的一个主要障碍。本研究通过结构表征（使用XRD）、表面形态分析（使用SEM）和元素组成分析（使用EDX），研究了通过热蒸发技术沉积的Te(GeSe)Y （Y = 0.05、0.1、0.15）薄膜的线性和非线性光学及电子特性。使用紫外可见分光光度计获得了范围从500到2500 nm的透射光谱，以确定光学特性。还确定了折射率（n）和消光系数（k），并应用陶克关系来评估光吸收数据。利用乌尔巴赫关系确定了吸收系数（α）。采用温普尔-迪多梅尼科模型来计算非线性折射率。此外，还确定了介电特性、损耗角正切以及表面/体积能量损失函数。薄膜的光学能带隙显示出允许的间接跃迁。观察到的光学参数增强表明所研究的成分适用于不同的光子应用。
