Giri Sasmita, Priyadarshini P, Alagarasan D, Ganesan R, Naik R
Department of Engineering and Material Physics, ICT-IOC Bhubaneswar 751013 India
Nitte Meenakshi Institute of Technology Yelahanka Bengaluru 560064 India.
RSC Adv. 2023 Aug 22;13(36):24955-24972. doi: 10.1039/d3ra03731b. eCollection 2023 Aug 21.
InSe and InTe have great importance in various device fabrications. The present report is based on the annealing-induced phase formation of both InSe and InTe from InSeTe thin films at different annealing temperatures as found from the XRD analysis and well supported by the Raman study. The average crystallite size increased with a decrease in the dislocation density. The surface morphology changed with annealing and increased in particle size as noticed from the FESEM images. The uniform distribution and presence of constituent elements in the film were verified using EDX data. The increase in transmittance is accompanied by a decrease in extinction coefficient, optical density and increase in skin depth with annealing. The increase in optical bandgap from 0.418 eV to 0.645 eV upon annealing at 250 °C is associated with a decrease in disorder. The steepness parameter increased and the value decreased with annealing. The refractive index decreased with an increase in oscillator energy and decrease in dispersion energy. The quality factor, dielectric loss, optical conductivity and electrical susceptibility decreased. The optical electronegativity and plasma frequency increased with annealing. There is a significant change in the non-linear susceptibility and non-linear refractive index with annealing. The observed changes in the film structure and optical behaviour are due to the annealing-induced phase formation from the InSeTe host matrix upon annealing. Such materials are suitable for optoelectronic and phase change devices.
InSe和InTe在各种器件制造中具有重要意义。本报告基于对InSeTe薄膜在不同退火温度下退火诱导的InSe和InTe相形成，这是通过XRD分析发现的，并得到了拉曼研究的有力支持。平均微晶尺寸随着位错密度的降低而增加。从FESEM图像可以看出，表面形态随着退火而变化，粒径增大。使用EDX数据验证了薄膜中组成元素的均匀分布和存在情况。随着退火，透过率增加，同时消光系数、光密度降低，趋肤深度增加。在250°C退火时，光学带隙从0.418 eV增加到0.645 eV与无序度的降低有关。随着退火，陡度参数增加， 值降低。折射率随着振荡能量的增加和色散能量的降低而降低。品质因数、介电损耗、光导率和电导率降低。随着退火，光学电负性和等离子体频率增加。随着退火，非线性极化率和非线性折射率有显著变化。观察到的薄膜结构和光学行为的变化是由于退火诱导InSeTe主体基质在退火时形成相。这类材料适用于光电器件和相变器件。
