Chen Shengqiong, Niu Jiebin, Li Longjie, Lu Cheng, Shi Lina, Xie Changqing
Opt Lett. 2022 May 1;47(9):2246-2249. doi: 10.1364/OL.452480.
High-index dielectric nanostructures are of particular interest for nanoscale lasing due to their low absorption losses. However, the relatively weak near-field restricts the isolated dielectric cavities as low-threshold integrated on-chip laser sources. Here, we demonstrate lasing action in a silicon nanowire pair with 32 nm gap coated with dye-doped shell on the silicon-on-insulator platform. It is found that the quality factor Q is dominated by the coupling of the silicon nanowire pair, which depends on the gap size, the nanowire width, and the dye thickness. A lasing peak at the wavelength of 529 nm with FWHM of 0.6 nm is experimentally realized by the Si nanowire pair width, and the corresponding pumping power threshold is ∼34 µW/cm. The proposed strategy, based on the well-established Si planar process, lays the groundwork for practical integrated nanolasers that have potential applications in photonic circuits.
由于吸收损耗低，高折射率介电纳米结构对于纳米级激光发射特别有吸引力。然而，相对较弱的近场限制了孤立的介电腔作为低阈值集成片上激光源。在此，我们展示了在绝缘体上硅平台上具有32纳米间隙且涂有染料掺杂壳层的硅纳米线对中的激光发射行为。发现品质因数Q由硅纳米线对的耦合主导，这取决于间隙尺寸、纳米线宽度和染料厚度。通过硅纳米线对宽度实验实现了波长为529纳米、半高宽为0.6纳米的激光峰，相应的泵浦功率阈值约为34微瓦/平方厘米。基于成熟的硅平面工艺所提出的策略，为在光子电路中具有潜在应用的实用集成纳米激光器奠定了基础。
