Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.
作者信息
Chang Hongliang, Liu Zhetong, Yang Shenyuan, Gao Yaqi, Shan Jingyuan, Liu Bingyao, Sun Jingyu, Chen Zhaolong, Yan Jianchang, Liu Zhiqiang, Wang Junxi, Gao Peng, Li Jinmin, Liu Zhongfan, Wei Tongbo
机构信息
Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.
出版信息
Light Sci Appl. 2022 Apr 29;11(1):119. doi: 10.1038/s41377-022-00802-y.
Abstract
摘要
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Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.作者更正：石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延
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本文引用的文献
1
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延生长
Light Sci Appl. 2022 Apr 7;11(1):88. doi: 10.1038/s41377-022-00756-1.
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