• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

相似文献

1
Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.作者更正：石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延
Light Sci Appl. 2022 Apr 29;11(1):119. doi: 10.1038/s41377-022-00802-y.
2
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延生长
Light Sci Appl. 2022 Apr 7;11(1):88. doi: 10.1038/s41377-022-00756-1.
3
Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.石墨烯助力深紫外发光二极管的AlN薄膜外延生长改进
Adv Mater. 2019 Jun;31(23):e1807345. doi: 10.1002/adma.201807345. Epub 2019 Apr 16.
4
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes.用于紫外发光二极管的纳米图案蓝宝石衬底上AlN薄膜的石墨烯辅助准范德华外延生长
J Vis Exp. 2020 Jun 25(160). doi: 10.3791/60167.
5
Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices.石墨烯驱动的AlN薄膜及深紫外光电器件新型应变弛豫
Light Sci Appl. 2022 May 30;11(1):164. doi: 10.1038/s41377-022-00861-1.
6
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.在外延生长的WS₂上直接进行无裂纹AlN薄膜的范德华外延生长。
Materials (Basel). 2018 Dec 4;11(12):2464. doi: 10.3390/ma11122464.
7
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire.在石墨烯缓冲蓝宝石上无应变AlN的快速生长。
J Am Chem Soc. 2018 Sep 26;140(38):11935-11941. doi: 10.1021/jacs.8b03871. Epub 2018 Sep 17.
8
Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.基于AlGaN的深紫外发光二极管在蓝宝石衬底上通过纳米级厚度的AlN成核层实现高质量无裂纹AlN薄膜的异质外延生长。
Nanomaterials (Basel). 2019 Nov 17;9(11):1634. doi: 10.3390/nano9111634.
9
Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer.通过垂直取向的石墨烯纳米壁缓冲层增强紫外发光二极管的散热
Adv Mater. 2019 Jul;31(29):e1901624. doi: 10.1002/adma.201901624. Epub 2019 May 29.
10
Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC.范德华外延薄膜的生长模型：以多层石墨烯/碳化硅上的 AlN 薄膜为例。
ACS Appl Mater Interfaces. 2017 Dec 20;9(50):44001-44009. doi: 10.1021/acsami.7b14494. Epub 2017 Dec 11.

本文引用的文献

1
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.石墨烯驱动应变工程实现用于深紫外发光二极管的AlN薄膜无应变外延生长
Light Sci Appl. 2022 Apr 7;11(1):88. doi: 10.1038/s41377-022-00756-1.

Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.

作者信息

Chang Hongliang, Liu Zhetong, Yang Shenyuan, Gao Yaqi, Shan Jingyuan, Liu Bingyao, Sun Jingyu, Chen Zhaolong, Yan Jianchang, Liu Zhiqiang, Wang Junxi, Gao Peng, Li Jinmin, Liu Zhongfan, Wei Tongbo

机构信息

Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China.

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, China.

出版信息

Light Sci Appl. 2022 Apr 29;11(1):119. doi: 10.1038/s41377-022-00802-y.

DOI:10.1038/s41377-022-00802-y
PMID:35487891
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9054817/
Abstract
摘要