Shen Yuxin, Zhang Zhaohao, Zhang Qingzhu, Wei Feng, Yin Huaxiang, Wei Qianhui, Men Kuo
State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd. Beijing 100088 China
GRIMAT Engineering Institute Co., Ltd. Beijing 101402 China.
RSC Adv. 2020 Feb 24;10(13):7812-7816. doi: 10.1039/d0ra00034e. eCollection 2020 Feb 18.
In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO/SiO/Si structure has been investigated, where Gd-doped HfO acts as a charge trapping and blocking layer. The device demonstrates a large memory window of 5.4 V under a ±5 V sweeping voltage (360% of the device with pure HfO), which is extremely attractive in low-power applications. In addition, the device also exhibits good retention characteristics with a 24.5% charge loss after the retention time of 1 × 10 seconds and robust endurance performance with a 1% degradation after 1 × 10 program/erase cycles. It is considered that the high density of defect states and the reduction in the defect energy levels induced by Gd-doping contribute to the performance improvement.
在本研究中，对一种具有Pt/Gd掺杂的HfO/SiO/Si结构的性能增强型电荷俘获存储器器件进行了研究，其中Gd掺杂的HfO充当电荷俘获和阻挡层。该器件在±5V扫描电压下表现出5.4V的大存储窗口（是纯HfO器件的360%），这在低功耗应用中极具吸引力。此外，该器件还具有良好的保持特性，在1×10秒的保持时间后电荷损失为24.5%，并且具有强大的耐久性，在1×10次编程/擦除循环后退化1%。据认为，Gd掺杂引起的高密度缺陷态和缺陷能级的降低有助于性能的提高。
