Wang Jer Chyi, Kao Chyuan Haur, Wu Chien Hung, Lin Chun Fu, Lin Chih Ju
Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan.
Department of Neurosurgery, Chang Gung Memorial Hospital, Linkou, Guishan Dist., Taoyuan 33305, Taiwan.
Nanomaterials (Basel). 2018 Oct 8;8(10):799. doi: 10.3390/nano8100799.
High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb₂O₅ and Ti-doped Nb₂O₅(TiNb₂O₇) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆V) window of the TiNb₂O₇ charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb₂O₇ nano-layer is because of a better electrical and structural performance, compared to the Nb₂O₅ nano-layer.
闪存应用中的高k材料电荷俘获纳米层由于具有更大的导带偏移和更高的介电常数，因而具有更快的编程/擦除速度和更好的数据保持能力。此外，掺钛高k材料可以改善存储器件的性能，如降低漏电流、提高k值和增加击穿电压。在本研究中，利用X射线衍射（XRD）和原子力显微镜（AFM）研究了不同退火温度对用作金属氧化物-高k氧化物-半导体（MOHOS）型存储器中电荷俘获纳米层的Nb₂O₅和掺钛Nb₂O₅（TiNb₂O₇）材料的结构和电学性能的影响。对C-V滞后曲线的分析表明，存储器件中TiNb₂O₇电荷俘获纳米层的平带位移（∆V）窗口可高达6.06 V。与Nb₂O₅纳米层相比，TiNb₂O₇纳米层具有更大的存储窗口，这是因为其具有更好的电学和结构性能。
