Li Juncheng, Yan Wenjie, Lv Yanhui, Leng Jian, Zhang Duan, Ó Coileáin Cormac, Cullen Conor P, Stimpel-Lindner Tanja, Duesberg Georg S, Cho Jiung, Choi Miri, Chun Byong Sun, Zhao Yanfeng, Lv Chengzhai, Arora Sunil K, Wu Han-Chun
School of Physics, Beijing Institute of Technology Beijing 100081 P. R. China
Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University Beijing 100048 P. R. China.
RSC Adv. 2020 Jan 8;10(3):1580-1587. doi: 10.1039/c9ra09103c. eCollection 2020 Jan 7.
Monolayer MoSe is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domains/nanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe monolayers with mobilities ranging from 38 to 8 cm V s. The average mobility is 12 cm V s. We further determine that the optical responsivity of monolayer MoSe is 42 mA W, with an external quantum efficiency of 8.22%.
单层二硒化钼是一种具有窄带隙、高光学吸收率和大自旋分裂能的过渡金属二卤化物，这使其在光电子领域具有广阔的应用前景。以可靠且可扩展的方式制备单层二硒化钼薄膜仍然是一项具有挑战性的任务，因为传统的化学气相沉积（CVD）或基于剥离的技术由于所获得的小畴/纳米片尺寸而受到限制。在此，基于氯化钠辅助的CVD，我们展示了简单且稳定地合成亚毫米尺寸的单晶单层二硒化钼，其迁移率范围为38至8 cm V s。平均迁移率为12 cm V s。我们进一步确定单层二硒化钼的光学响应率为42 mA W，外部量子效率为8.22%。
