Feng Yuyu, Zhang Xi, Lei Li, Nie Ya, Xiang Gang
College of Physics, Sichuan University Chengdu 610064 China
Institute of Atomic and Molecular Physics, Sichuan University Chengdu 610064 China.
RSC Adv. 2020 Mar 24;10(20):11990-11993. doi: 10.1039/d0ra01203c. eCollection 2020 Mar 19.
Microwave plasma chemical vapor deposition (MPCVD) has been traditionally used to synthesize carbon-based materials such as diamonds, carbon nanotubes and graphene. Here we report that a rapid and catalyst-free growth of SnSe thin films can be achieved by using single-mode MPCVD with appropriate source materials. The analysis combining microscope images, X-ray diffraction patterns and lattice vibration modes shows that the grown thin films were composed of orthorhombic structured SnSe polycrystals. Further thermoelectric (TE) characterization of the SnSe films reveals the high-performance power factor of 3.98 μW cm K at 600 K. Our results may open an avenue for rapid synthesis of new types of materials such as IV-VI compounds and be useful for TE application of these materials.
微波等离子体化学气相沉积(MPCVD)传统上用于合成碳基材料,如金刚石、碳纳米管和石墨烯。在此我们报告,通过使用单模MPCVD和合适的源材料,可以实现SnSe薄膜的快速无催化剂生长。结合显微镜图像、X射线衍射图谱和晶格振动模式的分析表明,生长的薄膜由正交结构的SnSe多晶体组成。对SnSe薄膜的进一步热电(TE)表征显示,在600 K时其高性能功率因数为3.98 μW cm K。我们的结果可能为快速合成新型材料(如IV-VI化合物)开辟一条途径,并对这些材料的热电应用有用。