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用于近红外发光二极管的ZnO:Ni纳米颗粒的实验与建模研究

Experimental and modeling study of ZnO:Ni nanoparticles for near-infrared light emitting diodes.

作者信息

Elhamdi Imen, Souissi Hajer, Taktak Olfa, Elghoul Jaber, Kammoun Souha, Dhahri Essebti, Costa Benilde F O

机构信息

Laboratoire de Physique Appliquée, Groupe de Physique des Matériaux Luminescents, Faculté des Sciences, Université de Sfax BP 1171 3000 Sfax Tunisia

Imam Mohammad Ibn Saud Islamic University (IMSIU), College of Sciences, Department of Physics Riyadh 11623 Saudi Arabia.

出版信息

RSC Adv. 2022 Apr 29;12(21):13074-13086. doi: 10.1039/d2ra00452f. eCollection 2022 Apr 28.

DOI:10.1039/d2ra00452f
PMID:35497006
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9052579/
Abstract

This work is devoted to the synthesis and study of the different properties of ZnO nanoparticles (NPs) doped with the Ni element. We have used a simple co-precipitation technique for the synthesis of our samples and various structural, morphological and optical techniques for their analysis. Energy-Dispersive X-ray spectroscopy (EDX) confirms the stoichiometry of the samples. The X-Ray Diffraction (XRD) patterns reveal the hexagonal wurtzite phase of polycrystalline ZnO with a 63 space group. Debye Scherrer and Williamson-Hall methods show that the average size of crystallites is around 40 nm. Transmission electron microscopy (TEM) images confirm the XRD results. The optical spectrum of ZnNiO shows the presence of near-band-edge (NBE) ultraviolet emission. The absorption defect bands appearing near the blue-green region and near infrared emission are attributed to the Ni intra-3d luminescence. The electronic structure of the Ni doped ZnO NPs confirms the site symmetry of Ni in the ZnO host crystal and leads to a perfect correlation between calculated and experimental energy levels.

摘要

这项工作致力于镍元素掺杂的氧化锌纳米颗粒（NPs）的合成及其不同性质的研究。我们采用简单的共沉淀技术来合成样品，并运用各种结构、形态和光学技术对其进行分析。能量色散X射线光谱（EDX）证实了样品的化学计量比。X射线衍射（XRD）图谱揭示了具有63空间群的多晶ZnO的六方纤锌矿相。德拜谢乐法和威廉姆森-霍尔法表明微晶的平均尺寸约为40nm。透射电子显微镜（TEM）图像证实了XRD结果。ZnNiO的光谱显示出近带边（NBE）紫外发射。出现在蓝绿色区域附近的吸收缺陷带和近红外发射归因于Ni的3d内发光。Ni掺杂的ZnO NPs的电子结构证实了Ni在ZnO主体晶体中的位点对称性，并导致计算能级与实验能级之间具有完美的相关性。

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