Department of Electronic and Electrical Engineering, University College London, London, WC1E 7JE, UK.
Department of Electrical and Electronic Engineering, Imperial College London, London, SW7 2AZ, UK.
Adv Sci (Weinh). 2022 Jun;9(17):e2105784. doi: 10.1002/advs.202105784. Epub 2022 May 4.
Recent years have seen a rapid rise of artificial neural networks being employed in a number of cognitive tasks. The ever-increasing computing requirements of these structures have contributed to a desire for novel technologies and paradigms, including memristor-based hardware accelerators. Solutions based on memristive crossbars and analog data processing promise to improve the overall energy efficiency. However, memristor nonidealities can lead to the degradation of neural network accuracy, while the attempts to mitigate these negative effects often introduce design trade-offs, such as those between power and reliability. In this work, authors design nonideality-aware training of memristor-based neural networks capable of dealing with the most common device nonidealities. The feasibility of using high-resistance devices that exhibit high I-V nonlinearity is demonstrated-by analyzing experimental data and employing nonideality-aware training, it is estimated that the energy efficiency of memristive vector-matrix multipliers is improved by almost three orders of magnitude (0.715 TOPs W to 381 TOPs W ) while maintaining similar accuracy. It is shown that associating the parameters of neural networks with individual memristors allows to bias these devices toward less conductive states through regularization of the corresponding optimization problem, while modifying the validation procedure leads to more reliable estimates of performance. The authors demonstrate the universality and robustness of this approach when dealing with a wide range of nonidealities.
近年来,人工神经网络在许多认知任务中得到了广泛应用。这些结构不断增加的计算需求促使人们寻求新的技术和范例,包括基于忆阻器的硬件加速器。基于忆阻器交叉阵列和模拟数据处理的解决方案有望提高整体能效。然而,忆阻器的非理想特性会导致神经网络精度下降,而试图减轻这些负面影响往往会引入设计权衡,例如在功率和可靠性之间进行权衡。在这项工作中,作者设计了一种基于忆阻器的神经网络的非理想感知训练,能够处理最常见的器件非理想特性。通过分析实验数据和采用非理想感知训练,证明了使用具有高 I-V 非线性的高阻器件的可行性,估计忆阻器向量矩阵乘法器的能效提高了近三个数量级(0.715 TOPs W 至 381 TOPs W),同时保持相似的精度。研究表明,将神经网络的参数与单个忆阻器相关联,可以通过正则化相应的优化问题,将这些器件偏向于导电性较低的状态,而修改验证过程则可以更可靠地估计性能。作者在处理广泛的非理想情况时,证明了这种方法的通用性和鲁棒性。