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光照下稻壳状掺钡羟基氧化镓的结构与光催化性能

Structure and photocatalytic performance of rice husk-like Ba-doped GaOOH under light irradiation.

作者信息

Huang Panqi, Luan Jingfei

机构信息

State Key Laboratory of Pollution Control and Resource Reuse, School of the Environment, Nanjing University Nanjing 210093 China

出版信息

RSC Adv. 2019 Jun 26;9(35):19930-19939. doi: 10.1039/c9ra03670a. eCollection 2019 Jun 25.

DOI:10.1039/c9ra03670a
PMID:35514685
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9065475/
Abstract

The effects of Ba-doping on the structure and photocatalytic performance of GaOOH were investigated for the first time in this paper. XRD, SEM, TEM, XPS, UPS, FT-IR, UV-Vis DRS, PL, BET and EPR characterizations were carried out to analyze the properties of Ba-doped GaOOH. The results showed that GaOOH crystallized well with the orthorhombic crystal system with space group . The lattice parameters of GaOOH were found to be = 4.509526 Å, = 9.771034 Å and = 2.969284 Å. The transition in the structural morphology of GaOOH before and after Ba-doping was observed in SEM pictures in which the morphology of GaOOH varied from wood-like to rice husk-like. At the same time, the specific surface area of 4 wt% Ba-doped GaOOH (21.5854 m g) was 3.42 times that of pure GaOOH (6.3047 m g). Ba-doping caused a red shift of the band gap according to UV-Vis DRS results. The enhanced defect states caused by Ba-doping was confirmed by PL results, which decreased the recombination rate of photogenerated electrons and photogenerated holes. Compared with pure GaOOH, when GaOOH with different Ba content was used as photocatalyst, the removal rate of enrofloxacin was increased by more than 20% only by illumination for 60 min. In addition, Ba-doped GaOOH had excellent stability and could be reused, which could reduce costs and increase the potential of its practical application.

摘要

本文首次研究了钡掺杂对GaOOH结构和光催化性能的影响。通过XRD、SEM、TEM、XPS、UPS、FT-IR、UV-Vis DRS、PL、BET和EPR表征来分析钡掺杂GaOOH的性能。结果表明,GaOOH结晶良好,属于正交晶系,空间群为 。发现GaOOH的晶格参数为 = 4.509526 Å, = 9.771034 Å, = 2.969284 Å。在SEM图片中观察到钡掺杂前后GaOOH结构形态的转变,其中GaOOH的形态从木状变为稻壳状。同时,4 wt%钡掺杂GaOOH的比表面积(21.5854 m g)是纯GaOOH(6.3047 m g)的3.42倍。根据UV-Vis DRS结果,钡掺杂导致带隙发生红移。PL结果证实了钡掺杂引起的缺陷态增强,这降低了光生电子和光生空穴的复合率。与纯GaOOH相比,当使用不同钡含量的GaOOH作为光催化剂时,仅光照60分钟,恩诺沙星的去除率就提高了20%以上。此外,钡掺杂GaOOH具有优异的稳定性,可以重复使用,这可以降低成本并增加其实际应用潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e8b3/9065475/f6e904951672/c9ra03670a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e8b3/9065475/f6e904951672/c9ra03670a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e8b3/9065475/f6e904951672/c9ra03670a-f4.jpg

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