Latha M, Aruna-Devi R, Velumani S, Murali B, Santoyo-Salazar J, de Moure-Flores F
Facultad de Química, Materiales-Energía, Universidad Autónomade Querétaro (UAQ) Santiago de Querétaro Qro C.P.76010 Mexico
Departamento de Ingeniería Eléctrica CINVESTAV-IPN, Av. IPN 2508, San Pedro Zacatenco C.P. 07360 Ciudad de México Mexico
RSC Adv. 2019 Oct 30;9(60):35197-35208. doi: 10.1039/c9ra07750b. eCollection 2019 Oct 28.
Herein, for the first time, we report the synthesis of quaternary Cu(In,Ga)Se microcrystals (CIGSe MCs) using a facile and economical one-pot heating-up method. The most important parameters such as reaction temperature and time were varied to study their influences on the structural, morphological, compositional and optical properties of the MCs. Based on the results, the formation of CIGSe was initiated from binary β-CuSe and then converted into pure phase CIGSe by gradual incorporation of In and Ga ions into the β-CuSe crystal lattice. As the reaction time increases, the band gap energy was increased from 1.10 to 1.28 eV, whereas the size of the crystals increased from 0.9 to 3.1 μm. Besides, large-scale synthesis of CIGSe MCs exhibited a high reaction yield of 90%. Furthermore, the CIGSe MCs dispersed in the ethanol was coated as thin films by a drop casting method, which showed the optimum carrier concentration, high mobility and low resistivity. Moreover, the photoconductivity of the CIGSe MC thin film was enhanced by three order magnitude in comparison with CIGSe NC thin films. The solar cells fabricated with CIGSe MCs showed the PCE of 0.59% which is 14.75 times higher than CIGSe NCs. These preliminary results confirmed the potential of CIGSe MCs as an active absorber layer in low-cost thin film solar cells.
在此，我们首次报道了采用简便且经济的一锅加热法合成四元铜铟镓硒微晶（CIGSe MCs）。我们改变了诸如反应温度和时间等最重要的参数，以研究它们对微晶的结构、形态、成分和光学性质的影响。基于这些结果，CIGSe的形成始于二元β - CuSe，然后通过In和Ga离子逐渐掺入β - CuSe晶格中转化为纯相CIGSe。随着反应时间的增加，带隙能量从1.10 eV增加到1.28 eV，而晶体尺寸从0.9μm增加到3.1μm。此外，CIGSe MCs的大规模合成显示出90%的高反应产率。此外，通过滴铸法将分散在乙醇中的CIGSe MCs涂覆成薄膜，该薄膜显示出最佳的载流子浓度、高迁移率和低电阻率。而且，与CIGSe NC薄膜相比，CIGSe MC薄膜的光电导率提高了三个数量级。用CIGSe MCs制备的太阳能电池的光电转换效率（PCE）为0.59%，比CIGSe NCs高14.75倍。这些初步结果证实了CIGSe MCs作为低成本薄膜太阳能电池中活性吸收层的潜力。
