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PtSe 中的堆叠多态性极大地影响其机电性能。

Stacking Polymorphism in PtSe Drastically Affects Its Electromechanical Properties.

作者信息

Kempt Roman, Lukas Sebastian, Hartwig Oliver, Prechtl Maximilian, Kuc Agnieszka, Brumme Thomas, Li Sha, Neumaier Daniel, Lemme Max C, Duesberg Georg S, Heine Thomas

机构信息

Chair of Theoretical Chemistry, Technische Universität Dresden, Bergstrasse 66, Dresden, 01069, Germany.

Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, Aachen, 52074, Germany.

出版信息

Adv Sci (Weinh). 2022 Aug;9(22):e2201272. doi: 10.1002/advs.202201272. Epub 2022 Jun 2.

Abstract

PtSe is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. It is shown that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device are estimated.

摘要

硒化铂是下一代压阻式传感器最具潜力的材料之一。然而,由于多晶性,大规模合成具有可重复机电性能的均匀薄膜具有挑战性。研究表明,在合成过程中常见的高温下,除1T相以外的堆叠相在热力学上变得可行。研究表明,这些相在多晶薄膜中可占相当大的比例,并讨论了表征它们的方法,包括它们的塞贝克系数。最后,估计了它们的应变系数,其变化很大且对纳米机电装置的性能有重大影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae9f/9353474/c20ccf6616b3/ADVS-9-2201272-g001.jpg

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