Chen Long, Li Zhenghan, Yan Chaoyi
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China
RSC Adv. 2020 Jun 22;10(40):23662-23667. doi: 10.1039/d0ra02033h. eCollection 2020 Jun 19.
Two-dimensional (2D) β-InS is a natural defective n-type semiconductor attracting considerable interest for its excellent photoelectronic performance. However, β-InS based photodetectors exhibited a weak near-infrared photoresponse compared to visible wavelength in past reports. In this work, high-quality 2D β-InS nanosheets were prepared by a space-confined chemical vapor deposition (CVD) method. Graphene/InS van der Waals heterostructures were constructed to realize an enhanced near-infrared photodetection performance by a series of transfer processes. The photodetectors based on graphene/InS van der Waals heterostructures through junction carrier separation exhibited a better infrared performance of high photoresponsivity ( ) of 0.49 mA W, external quantum efficiency (EQE) of 0.07%, and detectivity (*) of 3.05 × 10 jones using an 808 nm laser.
二维（2D）β-InS是一种天然的缺陷型n型半导体，因其优异的光电性能而备受关注。然而，在过去的报道中，与可见光波长相比，基于β-InS的光电探测器表现出较弱的近红外光响应。在这项工作中，通过空间限制化学气相沉积（CVD）方法制备了高质量的二维β-InS纳米片。通过一系列转移过程构建了石墨烯/InS范德华异质结构，以实现增强的近红外光电探测性能。基于石墨烯/InS范德华异质结构的光电探测器通过结载流子分离，在使用808 nm激光时表现出更好的红外性能，高光响应率为0.49 mA W，外量子效率（EQE）为0.07%，探测率为3.05×10琼斯。 （注：原文中括号处有缺失内容未完整给出）
