Chavan Apparao R, Somvanshi Sandeep B, Khirade Pankaj P, Jadhav K M
Department of Physics, Sir Parashurambhau College Pune (MS) 411030 India
Department of Physics, Dr Babasaheb Ambedkar Marathwada University Aurangabad (MS) 431004 India
RSC Adv. 2020 Jul 2;10(42):25143-25154. doi: 10.1039/d0ra04319b. eCollection 2020 Jun 29.
In this study, we mainly investigated the effects of trivalent Cr ion substitution on the properties of nickel ferrite (NCF) spinel-thin films. The as-prepared spinel thin films were characterized by thermogravimetry-differential thermal analysis (TGA-DTA) to comprehensively examine their phase transition. X-ray diffraction (XRD) analysis revealed that the prepared films have a single-phase face-centered cubic crystal structure. A Raman study confirmed the arrangement of the inverse-cubic spinel structure of these spinel-thin films. Field-emission scanning electron microscopy (FE-SEM) images verified the slight agglomeration of particles. Similarly, transmission electron microscopy (TEM) images together with selected area electron diffraction (SAED) patterns supported the XRD results. PL spectra showed enhanced near band emission (NBE) intensity due to the passivation of oxygen vacancies by Cr substitution. The DC electrical resistivity () increases from 1.4 × 10 Ω cm to 4.42 × 10 Ω cm at room temperature. Dielectric parameters were studied as a function of frequency in the range of 1-10 MHz at 300 K, and these parameters decreased with the increasing Cr ion concentration in the spinel-thin films. The obtained results indicate the applicability of the fabricated thin films in high-frequency electronic devices.
在本研究中,我们主要研究了三价铬离子取代对镍铁氧体(NCF)尖晶石薄膜性能的影响。通过热重-差示热分析(TGA-DTA)对制备的尖晶石薄膜进行表征,以全面研究其相变。X射线衍射(XRD)分析表明,制备的薄膜具有单相面心立方晶体结构。拉曼研究证实了这些尖晶石薄膜的反立方尖晶石结构排列。场发射扫描电子显微镜(FE-SEM)图像证实了颗粒有轻微团聚。同样,透射电子显微镜(TEM)图像以及选区电子衍射(SAED)图案支持了XRD结果。由于Cr取代使氧空位钝化,PL光谱显示近带发射(NBE)强度增强。室温下,直流电阻率()从1.4×10Ω·cm增加到4.42×10Ω·cm。在300K下,研究了介电参数随频率在1-10MHz范围内的变化,这些参数随着尖晶石薄膜中Cr离子浓度的增加而降低。所得结果表明所制备的薄膜在高频电子器件中的适用性。