Pulipaka Supriya, Koushik A K S, Deepa Melepurath, Meduri Praveen
Department of Chemical Engineering, Indian Institute of Technology Hyderabad Kandi, Sangareddy-502285 Telangana India
Department of Chemistry, Indian Institute of Technology Hyderabad Kandi, Sangareddy-502285 Telangana India.
RSC Adv. 2019 Jan 11;9(3):1335-1340. doi: 10.1039/c8ra09660k. eCollection 2019 Jan 9.
This work is primarily focused on indium sulfide (β-InS) and cobalt (Co)-doped β-InS nanoflakes as photoanodes for water oxidation. The incorporation of cobalt introduces new dopant energy levels increasing visible light absorption and leading to improved photo-activity. In addition, cobalt ion centers in β-InS act as potential catalytic sites to promote electro-activity. 5 mol% Co-doped β-InS nanoflakes when tested for photoelectrochemical water splitting exhibited a photocurrent density of 0.69 mA cm at 1.23 V, much higher than that of pure β-InS.
这项工作主要聚焦于硫化铟（β-InS）以及钴（Co）掺杂的β-InS纳米片作为水氧化光阳极的研究。钴的掺入引入了新的掺杂能级，增加了可见光吸收并提高了光活性。此外，β-InS中的钴离子中心作为潜在的催化位点促进了电活性。当对5 mol% Co掺杂的β-InS纳米片进行光电化学水分解测试时，在1.23 V下表现出0.69 mA cm的光电流密度，远高于纯β-InS的光电流密度。
