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利用阳离子反转设计用于未来光源的超宽带近红外材料MgYGeO:Cr

Designing a super broadband near infrared material MgYGeO:Cr using cation inversion for future light sources.

作者信息

Meng Xiangyu, Zhang Xiaoshuai, Shi Xueli, Qiu Keliang, Wang Zhijun, Wang Dawei, Zhao Jinxin, Li Xue, Yang Zhiping, Li Panlai

机构信息

National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University Baoding 071002 China

Hebei Key Laboratory of Semiconductor Lighting and Display Critical Materials Baoding 071000 China.

出版信息

RSC Adv. 2020 May 19;10(32):19106-19116. doi: 10.1039/d0ra01742f. eCollection 2020 May 14.

DOI:10.1039/d0ra01742f
PMID:35518283
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9053909/
Abstract

A series of broad emission band near infrared materials MgYGeO:Cr (650-1200 nm) was prepared based on cation inversion. For trivalent chromium ions (Cr), garnet structural components can provide conditions for the occurrence of cation inversion. With an increase in Cr concentration, the Mg and Ge cations are inverted to ensure valence equilibrium, which was explained by recording the low temperature spectrum of the structure and carrying out structural refinement. As a result, this structure provides a new luminescent center [GeO] for Cr, leading to a secondary enhancement in emission intensity. The wavelength of the main peak was found to move from 771 to 811 nm, and the full width at half maximum (FWHM) was broadened from 180 to 226 nm. The lattice occupation, luminescence mechanism and the reasons behind the red-shift and broadening of the spectra were studied in detail. By analyzing the crystallinity and particle size distributions of the samples, as well as the Cr ion energy level shift, it was determined that cation inversion is an effective method that can be used to tune the luminescence performance. Meanwhile, a super broad near infrared light emitting diode (LED) with a FWHM of 260 nm was obtained by combining a GaN chip with MYG:0.40Cr.

摘要

基于阳离子反转制备了一系列宽带发射带近红外材料MgYGeO:Cr（650 - 1200纳米）。对于三价铬离子（Cr），石榴石结构成分可为阳离子反转的发生提供条件。随着Cr浓度的增加，Mg和Ge阳离子发生反转以确保价态平衡，这通过记录结构的低温光谱并进行结构精修得到了解释。结果，这种结构为Cr提供了一个新的发光中心[GeO]，导致发射强度二次增强。发现主峰波长从771纳米移至811纳米，半高宽（FWHM）从180纳米拓宽至226纳米。详细研究了晶格占据、发光机制以及光谱红移和展宽背后的原因。通过分析样品的结晶度和粒度分布以及Cr离子能级移动，确定阳离子反转是一种可用于调节发光性能的有效方法。同时，通过将GaN芯片与MYG:0.40Cr组合，获得了半高宽为260纳米的超宽带近红外发光二极管（LED）。

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