用于发光二极管的掺铬近红外发射氟钇酸盐的发光特性

Luminescence properties of Cr-doped near-infrared emissive fluoroyttrates for light-emitting diodes.

作者信息

Qing Song, Zhang Xi, Yang Tao, Chu Lingxiang, Zhou Yayun, Wan Jing, Wang Zhengliang, Tang Huaijun, Zhou Qiang

机构信息

Key Laboratory of Green Chemistry Materials in University of Yunnan Province, Key Laboratory of Advanced Synthetic Chemistry (Yunnan Minzu University) of National Ethnic Affairs Commission, School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, P. R. China.

State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510641, P. R. China.

出版信息

Dalton Trans. 2022 Sep 26;51(37):14214-14220. doi: 10.1039/d2dt02096c.

DOI:10.1039/d2dt02096c

PMID:36062936

Abstract

In this work, a series of Cr-doped ANaYF (denoted as ANYF:Cr; A = K, Rb, and Cs) fluoroyttrate double-perovskites with broad blue excitation and near-infrared (NIR) emission bands were prepared using a high-temperature solid-state reaction method. The physicochemical and spectroscopic properties of the as-prepared products, including crystal structure, bandgap, morphology, luminescence behaviour and optical performance, were studied in detail. The results show that the Cr activators undergo a decreasing crystal field in ANYF in the direction from K to Cs, yielding a red shift of the emission peak position from 758 to 786 nm, whilst the full-width-at-half-maximum (FWHM) expands from 98 to 104 nm. By virtue of the broadband NIR emission, clear structural images of the tangerine section, mini LED flashlight and circuit board were obtained by merging the optimal RNYF:Cr phosphor on a blue InGaN chip, implying its potential use in light-emitting diodes for non-destructive testing.

摘要

在本工作中，采用高温固相反应法制备了一系列具有宽蓝光激发和近红外（NIR）发射带的Cr掺杂ANaYF（表示为ANYF:Cr；A = K、Rb和Cs）氟钇矿双钙钛矿。详细研究了所制备产物的物理化学和光谱性质，包括晶体结构、带隙、形貌、发光行为和光学性能。结果表明，Cr激活剂在ANYF中从K到Cs方向的晶体场逐渐减小，发射峰位置从758 nm红移至786 nm，而半高宽（FWHM）从98 nm扩展到104 nm。借助宽带近红外发射，通过将最佳的RNYF:Cr荧光粉合并在蓝色InGaN芯片上，获得了橘子切片、微型LED手电筒和电路板的清晰结构图像，这意味着其在用于无损检测的发光二极管中的潜在应用。