Ju Shang, Ding Yamei, Yin Yuhang, Cheng Shuai, Wang Xiangjing, Mao Huiwu, Zhou Zhe, Song Mengya, Chang Qing, Ban Chaoyi, Liu Zhengdong, Liu Juqing
Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China
RSC Adv. 2019 Jun 3;9(30):17399-17404. doi: 10.1039/c9ra03052b. eCollection 2019 May 29.
Two-dimensional carbon semiconductors have aroused great attention due to their unique structures and novel properties, showing potential applications in emerging electronic and optoelectronic devices. In this work, we reported an effective strategy to controllable prepare ultrathin carbon nanofilms (CNFs) by combining -growth and stepwise thermal annealing, with the features of large-area, tunable properties and nanoscale thickness. The structures, morphologies and electrical properties of these as-prepared CNFs were characterized systematically. Impressively, tunable electrical properties from low to semi- and high conductivity could be precisely achieved through stepwise annealing of conjugated microporous polymer films. By introducing CNF-750 as the active channel layer, the transistor exhibited a typical p-type semiconductor property. Moreover, by further coupling CNF-750 with carbon dots (CDs) as a photoresponse layer, the as-fabricated all-carbon diode based on CDs/CNF-750 heterostructure film showed high ultraviolet (UV) light response.
二维碳半导体因其独特的结构和新颖的性质而备受关注，在新兴的电子和光电器件中显示出潜在的应用前景。在这项工作中，我们报道了一种通过结合生长和逐步热退火来可控制备超薄碳纳米膜（CNFs）的有效策略，该碳纳米膜具有大面积、可调控性质和纳米级厚度的特点。系统地表征了这些制备好的CNFs的结构、形貌和电学性质。令人印象深刻的是，通过对共轭微孔聚合物薄膜进行逐步退火，可以精确地实现从低到半高电导率的可调电学性质。通过引入CNF-750作为有源沟道层，晶体管表现出典型的p型半导体性质。此外，通过进一步将CNF-750与碳点（CDs）耦合作为光响应层，基于CDs/CNF-750异质结构薄膜制备的全碳二极管表现出高紫外（UV）光响应。
