Tuktarov A R, Salikhov R B, Khuzin A A, Popod'ko N R, Safargalin I N, Mullagaliev I N, Dzhemilev U M
Institute of Petrochemistry and Catalysis, Russian Academy of Sciences Russian Federation
Department of Infocommunication Technologies and Nanoelectronics, Bashkir State University Russian Federation.
RSC Adv. 2019 Mar 8;9(13):7505-7508. doi: 10.1039/c9ra00939f. eCollection 2019 Mar 1.
Photocontrolled organic field-effect transistors (OFETs) containing a hybrid compound of fullerene C (n-semiconductor) with spiropyran (electrical conductivity photocontroller) as the active layer were fabricated for the first time. It was found that an OFET based on the hybrid compound, unlike the multilayer transistor (a device based on unmodified fullerene C and spiropyran in different layers), has higher transfer characteristics (source-to-drain current), charge carrier mobility in the active layer, and response rate to external influence, which makes them promising materials for the manufacture of optical memory elements.
首次制造出了以富勒烯C（n型半导体）与螺吡喃（电导率光控制器）的混合化合物作为有源层的光控有机场效应晶体管（OFET）。研究发现，基于该混合化合物的OFET与多层晶体管（一种基于不同层中未改性的富勒烯C和螺吡喃的器件）不同，具有更高的转移特性（源漏电流）、有源层中的电荷载流子迁移率以及对外界影响的响应速率，这使其成为制造光学存储元件的有前景的材料。
