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全赫斯勒化合物CaYZ(Y = Au,Hg;Z = As,Sb,Bi,Sn和Pb)的电子结构和热电性能

Electronic structure and thermoelectric properties of full Heusler compounds CaYZ (Y = Au, Hg; Z = As, Sb, Bi, Sn and Pb).

作者信息

Hu Yang, Jin Yurong, Zhang Guangbiao, Yan Yuli

机构信息

Institute for Computational Materials Science, School of Physics and Electronics, Henan University Kaifeng 475004 China

Chongqing Institute of Engineering Chongqing 402360 China.

出版信息

RSC Adv. 2020 Aug 3;10(48):28501-28508. doi: 10.1039/d0ra04984k.

DOI:10.1039/d0ra04984k
PMID:35520033
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9055840/
Abstract

We investigate the transport properties of bulk CaYZ (Y = Au, Hg; Z = As, Sb, Bi, Sn and Pb) by a combination method of first-principles and Boltzmann transport theory. The focus of this article is the systematic study of the thermoelectric properties under the effect of a spin-orbit coupling. The highest dimensionless figure of merit () of CaAuAs at optimum carrier concentration are 1.23 at 700 K. Interestingly enough, for n-type CaHgPb, the maximum are close to each other from 500 K to 900 K and these values are close to 1, which suggests that semimetallic material can also be used as an excellent candidate for thermoelectric materials. From another viewpoint, at room temperature, the maximum PF for CaYZ are greater than 3 mW m K, which is very close to that of ∼3 mW m K for BiTe and ∼4 mW m K for FeVAl. However, the room temperature theoretical of CaYZ is only about 0.85-1.6 W m K, which is comparing to 1.4 W m K for BiTe and remarkably lower than 28 W m K for FeVAl at same temperature. So CaYZ should be a new type of promising thermoelectric material at room temperature.

摘要

我们采用第一性原理和玻尔兹曼输运理论相结合的方法,研究了块状CaYZ(Y = Au、Hg;Z = As、Sb、Bi、Sn和Pb)的输运性质。本文的重点是在自旋轨道耦合效应下对热电性质进行系统研究。在最佳载流子浓度下,CaAuAs在700 K时的最高无量纲品质因数( )为1.23。有趣的是,对于n型CaHgPb,在500 K至900 K范围内,其最大 值彼此接近且接近1,这表明半金属材料也可作为热电材料的优秀候选者。从另一个角度来看,在室温下,CaYZ的最大功率因子(PF)大于3 mW m K,这与BiTe的约3 mW m K以及FeVAl的约4 mW m K非常接近。然而,CaYZ在室温下的理论 仅约为0.85 - 1.6 W m K,与之相比,BiTe在相同温度下为1.4 W m K,而FeVAl则显著低于28 W m K。因此,CaYZ在室温下应是一种新型的有前景的热电材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/9010335a0407/d0ra04984k-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/d3b665a63059/d0ra04984k-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/9c3e46e758ef/d0ra04984k-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/9675edc1f7ae/d0ra04984k-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/52c84495b287/d0ra04984k-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/9010335a0407/d0ra04984k-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/d3b665a63059/d0ra04984k-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/9c3e46e758ef/d0ra04984k-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/9675edc1f7ae/d0ra04984k-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/52c84495b287/d0ra04984k-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc53/9055840/9010335a0407/d0ra04984k-f5.jpg

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2
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Phys Chem Chem Phys. 2019 Feb 20;21(8):4624-4632. doi: 10.1039/c8cp07645f.
3
Discovery of TaFeSb-based half-Heuslers with high thermoelectric performance.
发现具有高热电性能的 TaFeSb 基半赫斯勒合金。
Nat Commun. 2019 Jan 17;10(1):270. doi: 10.1038/s41467-018-08223-5.
4
Ultralow Thermal Conductivity in Full Heusler Semiconductors.全赫斯勒半导体中的超低热导率
Phys Rev Lett. 2016 Jul 22;117(4):046602. doi: 10.1103/PhysRevLett.117.046602. Epub 2016 Jul 21.
5
Optimizing the Dopant and Carrier Concentration of Ca5Al2Sb6 for High Thermoelectric Efficiency.优化 Ca5Al2Sb6 的掺杂剂和载流子浓度以提高热电效率。
Sci Rep. 2016 Jul 13;6:29550. doi: 10.1038/srep29550.
6
Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.通过对高度各向异性电子态的能带工程实现体半导体中的低维输运和大的热电功率因子。
Phys Rev Lett. 2015 Apr 3;114(13):136601. doi: 10.1103/PhysRevLett.114.136601. Epub 2015 Mar 31.
7
Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential.具有半局域交换关联势的半导体和绝缘体的精确带隙
Phys Rev Lett. 2009 Jun 5;102(22):226401. doi: 10.1103/PhysRevLett.102.226401. Epub 2009 Jun 3.
8
Complex thermoelectric materials.复杂热电材料
Nat Mater. 2008 Feb;7(2):105-14. doi: 10.1038/nmat2090.
9
Generalized Gradient Approximation Made Simple.广义梯度近似简化法
Phys Rev Lett. 1996 Oct 28;77(18):3865-3868. doi: 10.1103/PhysRevLett.77.3865.
10
Exact exchange-only potentials and the virial relation as microscopic criteria for generalized gradient approximations.精确的仅交换势和维里关系作为广义梯度近似的微观标准。
Phys Rev B Condens Matter. 1993 May 15;47(20):13164-13174. doi: 10.1103/physrevb.47.13164.