Enriching NLO efficacy designing non-fullerene molecules with the modification of acceptor moieties into ICIF2F: an emerging theoretical approach.

Non-fullerene (NF)-based compounds have attracted much attention as compared to fullerene-based materials because of their promising optoelectronic properties, lower synthetic cost and greater stability. Usually, the end-capped groups have a promising impact in magnifying the nonlinear optical (NLO) characteristics in the non-fullerene molecules. Based on this, a series of new NLO active non-fullerene molecules (NFAD2-NFAD6) have been established. The non-fullerene molecules (NFAD2-NFAD6) were designed by end-capped modification in acceptor moieties of the reference (NFAR1), while donor and π-bridge moieties were kept the same in the entire series. Quantum chemistry-based calculations at the M06/6-311G(d,p) level were done to determine the NLO characteristics and for other supportive analyses. The acceptor and donor moieties were utilized at the opposite terminals of NFAD2-NFAD6, which proved to be an effective approach in tuning the FMO band gap. Overall the results of natural bond orbital (NBO), density of state (DOS) and transition density matrices (TDMs) analyses supported the NLO properties of the designed compounds. Among all the studied compounds, NFAD4 was proven to be the most suitable candidate due to its promising NLO properties, well supported by a lower bandgap of 1.519 eV and a maximum absorption wavelength of 999.550 nm. Therefore, NFAD4 was reported with greater amplitude of dipole polarizability (10.429 e.s.u), average polarizability (2.953 × 10 e.s.u), first hyperpolarizability (13.16 × 10 e.s.u.) and second hyperpolarizability (2.150 × 10 e.s.u.) than other derivatives and NFAR1. Subsequently, the present study depicted the significance of utilizing different non-fullerene (NF)-based acceptor moieties to achieve the promising NLO material. This computational study may lead towards new plausible pathways for researchers to design potent NLO substances for impending hi-tech applications.