通过低压化学气相沉积中六甲基二硅胺烷（HMDS）流速控制〈111〉-3C-SiC薄膜的形貌

Morphology controlling of 〈111〉-3C-SiC films by HMDS flow rate in LCVD.

作者信息

Xu Qingfang, Tu Rong, Sun Qingyun, Yang Meijun, Li Qizhong, Zhang Song, Zhang Lianmeng, Goto Takashi, Ohmori Hitoshi, Shi Ji, Li Haiwen, Kosinova Marina, Bikramjit Basu

机构信息

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China

Hubei Key Laboratory of Advanced Technology for Automotive Components, Wuhan University of Technology Wuhan 430070 China.

出版信息

RSC Adv. 2019 Jan 18;9(5):2426-2430. doi: 10.1039/c8ra09509d.

DOI:10.1039/c8ra09509d

PMID:35520524

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9059850/

Abstract

Morphology of 〈111〉-oriented 3C-SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate () of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD). The SiC whiskers were naturally sharp hexagonal pyramids with average height of 250 nm and an aspect ratio in the range of 5 to 10, with a density of 1.3 × 10 mm. The influence mechanism of on the surface morphology, as well as the growth mechanism of SiC whiskers, was discussed.

摘要

在激光化学气相沉积（LCVD）过程中，随着六甲基二硅烷（HMDS）流量（）的增加，〈111〉取向的3C-SiC薄膜的形貌从镶嵌状转变为晶须状再到菜花状。SiC晶须为自然尖锐的六棱锥，平均高度为250 nm，长径比在5至10之间，密度为1.3×10 mm。讨论了对表面形貌的影响机制以及SiC晶须的生长机制。