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纳米晶、微晶和外延立方碳化硅薄膜的电化学性质及应用

Electrochemical properties and applications of nanocrystalline, microcrystalline, and epitaxial cubic silicon carbide films.

作者信息

Zhuang Hao, Yang Nianjun, Zhang Lei, Fuchs Regina, Jiang Xin

机构信息

Institute of Materials Engineering, University of Siegen, Paul-Bonatz-Strasse 9-11, 57076 Siegen, Germany.

出版信息

ACS Appl Mater Interfaces. 2015 May 27;7(20):10886-95. doi: 10.1021/acsami.5b02024. Epub 2015 May 12.

Abstract

Microstructures of the materials (e.g., crystallinitiy, defects, and composition, etc.) determine their properties, which eventually lead to their diverse applications. In this contribution, the properties, especially the electrochemical properties, of cubic silicon carbide (3C-SiC) films have been engineered by controlling their microstructures. By manipulating the deposition conditions, nanocrystalline, microcrystalline and epitaxial (001) 3C-SiC films are obtained with varied properties. The epitaxial 3C-SiC film presents the lowest double-layer capacitance and the highest reversibility of redox probes, because of its perfect (001) orientation and high phase purity. The highest double-layer capacitance and the lowest reversibility of redox probes have been realized on the nanocrystalline 3C-SiC film. Those are ascribed to its high amount of grain boundaries, amorphous phases and large diversity in its crystal size. Based on their diverse properties, the electrochemical performances of 3C-SiC films are evaluated in two kinds of potential applications, namely an electrochemical capacitor using a nanocrystalline film and an electrochemical dopamine sensor using the epitaxial 3C-SiC film. The nanocrystalline 3C-SiC film shows not only a high double layer capacitance (43-70 μF/cm(2)) but also a long-term stability of its capacitance. The epitaxial 3C-SiC film shows a low detection limit toward dopamine, which is one to 2 orders of magnitude lower than its normal concentration in tissue. Therefore, 3C-SiC film is a novel but designable material for different emerging electrochemical applications such as energy storage, biomedical/chemical sensors, environmental pollutant detectors, and so on.

摘要

材料的微观结构(例如结晶度、缺陷和成分等)决定了它们的性能,最终导致其具有多种应用。在本论文中,通过控制立方碳化硅(3C-SiC)薄膜的微观结构来设计其性能,尤其是电化学性能。通过控制沉积条件,获得了具有不同性能的纳米晶、微晶和外延(001)3C-SiC薄膜。外延3C-SiC薄膜由于其完美的(001)取向和高相纯度,呈现出最低的双层电容和氧化还原探针的最高可逆性。纳米晶3C-SiC薄膜实现了最高的双层电容和氧化还原探针的最低可逆性。这归因于其大量的晶界、非晶相以及晶体尺寸的巨大差异。基于其不同的性能,在两种潜在应用中评估了3C-SiC薄膜的电化学性能,即使用纳米晶薄膜的电化学电容器和使用外延3C-SiC薄膜的电化学多巴胺传感器。纳米晶3C-SiC薄膜不仅显示出高双层电容(43-70 μF/cm²),而且其电容具有长期稳定性。外延3C-SiC薄膜对多巴胺显示出低检测限,比其在组织中的正常浓度低1至2个数量级。因此,3C-SiC薄膜是一种新型的、可设计的材料,适用于不同的新兴电化学应用,如能量存储、生物医学/化学传感器、环境污染物探测器等。

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