Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD.

作者信息

Hu Zhiying, Zheng Dingheng, Tu Rong, Yang Meijun, Li Qizhong, Han Mingxu, Zhang Song, Zhang Lianmeng, Goto Takashi

机构信息

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.

Hubei Key Laboratory Advanced Technology of Automobile Parts, Wuhan University of Technology, Wuhan 430070, China.

出版信息

Materials (Basel). 2019 Jan 27;12(3):390. doi: 10.3390/ma12030390.

DOI:10.3390/ma12030390

PMID:30691185

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6384857/

Abstract

Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl₄) and methane (CH₄) as precursors. The effects of deposition temperature () and total pressure () on the orientation and surficial morphology were investigated. The results showed that the growth orientation of 3C-SiC columnar grains was strongly influenced by T. With increasing T, the columnar grains transformed from <111>- to <110>-oriented. The arrangement of <111>-oriented columnar grains was controlled by . Lotus-, turtle-, thorn-, and strawberry-like surface morphologies were naturally contributed by different arrangements of <111>-oriented grains, and the deposition mechanism was discussed. The wetting behaviors of CVD-SiC samples by molten aluminum were also examined at 1173 K in a high vacuum atmosphere.

摘要