Bae Jinho, Kim Hyoung Woo, Kang In Ho, Kim Jihyun
Department of Chemical and Biological Engineering, Korea University Anamdong-5-Ga Seoul 02841 South Korea
Korea Electrotechnology Research Institute (KERI) Seongsan-gu Changwon-si Gyeongsangnam-do 51543 South Korea.
RSC Adv. 2019 Mar 27;9(17):9678-9683. doi: 10.1039/c9ra01163c. eCollection 2019 Mar 22.
The narrow voltage swing of a nanoelectronic device limits its implementations in electronic circuits. Nanolayer β-GaO has a superior breakdown field of approximately 8 MV cm, making it an ideal candidate for a next-generation power device nanomaterial. In this study, a field modulating plate was introduced into a β-GaO nano-field-effect transistor (nanoFET) to engineer the distribution of electric fields, wherein the off-state three-terminal breakdown voltage was reported to be 314 V. β-GaO flakes were separated from a single-crystal bulk substrate using a mechanical exfoliation method. The layout of the field modulating plate was optimized through a device simulation to effectively distribute the peak electric fields. The field-plated β-GaO nanoFETs exhibited n-type behaviors with a high output current saturation, exhibiting excellent switching characteristics with a threshold voltage of -3.8 V, a subthreshold swing of 101.3 mV dec, and an on/off ratio greater than 10. The β-GaO nanoFETs with a high breakdown voltage of over 300 V could pave a way for downsizing power electronic devices, enabling the economization of power systems.
纳米电子器件狭窄的电压摆幅限制了其在电子电路中的应用。纳米层β-GaO具有约8 MV/cm的优异击穿场强，使其成为下一代功率器件纳米材料的理想候选者。在本研究中，将场调制板引入β-GaO纳米场效应晶体管（nanoFET）以调控电场分布，其中报道的关态三端击穿电压为314 V。使用机械剥离法从单晶块状衬底上分离出β-GaO薄片。通过器件模拟优化场调制板的布局，以有效分布峰值电场。场镀β-GaO纳米场效应晶体管表现出n型行为，具有高输出电流饱和，展现出优异的开关特性，阈值电压为-3.8 V，亚阈值摆幅为101.3 mV/dec，开/关比大于10。具有超过300 V高击穿电压的β-GaO纳米场效应晶体管可为功率电子器件的小型化铺平道路，实现电力系统的节能。
