Li Xiao-Xi, Sun Yu, Zeng Guang, Li Yu-Chun, Zhang Rui, Sai Qing-Lin, Xia Chang-Tai, Zhang David Wei, Yang Ying-Guo, Lu Hong-Liang
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
The School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311215, China.
J Phys Chem Lett. 2022 Apr 21;13(15):3377-3381. doi: 10.1021/acs.jpclett.2c00722. Epub 2022 Apr 11.
β-GaO is considered an attractive candidate for next-generation high-power electronics due to its large band gap of 4.9 eV and high breakdown electrical field of 8 MV/cm. However, the relatively low carrier concentration and low electron mobility in the β-GaO-based device limit its application. Herein, the high-quality β-GaO single crystal with high doping concentration of ∼3.2 × 10 cm was realized using an optical float-zone method through Ta doping. In contrast to the SiO/β-GaO gate stack structure, we used hexagonal boron nitride as the gate insulator, which is sufficient to suppress the metal-insulator-semiconductor (MIS) interface defects of the β-GaO-based MIS field-effect transistors (FETs), exhibiting outstanding performances with a low specific on-resistance of ∼6.3 mΩ·cm, a high current on/off ratio of ∼10, and a high mobility of ∼91.0 cm/(V s). Our findings offer a unique perspective to fabricate high-performance β-GaO FETs for next-generation high-power nanoelectronic applications.
由于β-GaO具有4.9 eV的大带隙和8 MV/cm的高击穿电场，它被认为是下一代高功率电子器件的有吸引力的候选材料。然而，基于β-GaO的器件中相对较低的载流子浓度和低电子迁移率限制了其应用。在此，通过Ta掺杂采用光学浮区法实现了具有约3.2×10 cm高掺杂浓度的高质量β-GaO单晶。与SiO/β-GaO栅堆叠结构不同，我们使用六方氮化硼作为栅绝缘体，这足以抑制基于β-GaO的金属-绝缘体-半导体（MIS）场效应晶体管（FET）的金属-绝缘体-半导体界面缺陷，表现出优异的性能，具有约6.3 mΩ·cm的低比导通电阻、约10的高电流开/关比和约91.0 cm²/(V·s)的高迁移率。我们的研究结果为制造用于下一代高功率纳米电子应用的高性能β-GaO FET提供了独特的视角。
