Dou Yan-Mei, Zhang Chang-Wen, Li Ping, Wang Pei-Ji
School of Physics and Technology, University of Jinan Jinan Shandong 250022 People's Republic of China
RSC Adv. 2019 Mar 27;9(17):9633-9639. doi: 10.1039/c9ra00450e. eCollection 2019 Mar 22.
Using calculations, we present a two-dimensional (2D) α-2D-germanene dioxide material with an ideal sp bonding network which possesses a large band gap up to 2.50 eV. The phonon dispersion curves and molecular dynamics (MD) simulation under the chosen parameters suggest that the novel 2D structure is stable. The dielectric function and absorption spectrum also show the consistent band gap within the electronic structure diagram, suggesting possible application as an ultraviolet light optical detector. The calculated carrier mobility of 4.09 × 10 cm V s can be observed along the direction, which is much higher than that of MoS (∼3.0 cm V s). Finally, we found that α-2D-germanene dioxide could potentially act as an ideal monolayer insulator in so-called van der Waals (vdW) heterostructure devices. These findings expand the potential applications of the emerging field of 2D α-2D-germanene dioxide materials in nanoelectronics.
通过计算,我们展示了一种二维(2D)α - 2D - 二氧化锗材料,其具有理想的sp键合网络,拥有高达2.50 eV的大带隙。在所选参数下的声子色散曲线和分子动力学(MD)模拟表明,这种新型二维结构是稳定的。介电函数和吸收光谱在电子结构图中也显示出一致的带隙,表明其有可能用作紫外光光学探测器。沿 方向可观察到计算出的载流子迁移率为4.09×10 cm²V⁻¹s⁻¹,这远高于MoS₂(约3.0 cm²V⁻¹s⁻¹)。最后,我们发现α - 2D - 二氧化锗在所谓的范德华(vdW)异质结构器件中可能潜在地充当理想的单层绝缘体。这些发现扩展了二维α - 2D - 二氧化锗材料新兴领域在纳米电子学中的潜在应用。