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具有面内负泊松比的新型二维二氧化硅。

Novel Two-Dimensional Silicon Dioxide with in-Plane Negative Poisson's Ratio.

机构信息

Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University , 200092 Shanghai, P. R. China.

China-EU Joint Center for Nanophononics, School of Physics Science and Engineering, Tongji University , 200092 Shanghai, P. R. China.

出版信息

Nano Lett. 2017 Feb 8;17(2):772-777. doi: 10.1021/acs.nanolett.6b03921. Epub 2017 Jan 23.

Abstract

Silicon dioxide or silica, normally existing in various bulk crystalline and amorphous forms, was recently found to possess a two-dimensional structure. In this work, we use ab initio calculation and evolutionary algorithm to unveil three new two-dimensional (2D) silica structures whose thermal, dynamical, and mechanical stabilities are compared with many typical bulk silica. In particular, we find that all three of these 2D silica structures have large in-plane negative Poisson's ratios with the largest one being double of penta graphene and three times of borophenes. The negative Poisson's ratio originates from the interplay of lattice symmetry and Si-O tetrahedron symmetry. Slab silica is also an insulating 2D material with the highest electronic band gap (>7 eV) among reported 2D structures. These exotic 2D silica with in-plane negative Poisson's ratios and widest band gaps are expected to have great potential applications in nanomechanics and nanoelectronics.

摘要

二氧化硅或硅石,通常以各种块状晶体和无定形形式存在,最近被发现具有二维结构。在这项工作中,我们使用从头计算和演化算法来揭示三种新的二维(2D)硅石结构,其热、动力和机械稳定性与许多典型的块状硅石进行了比较。特别是,我们发现这三种二维硅石结构都具有大的面内负泊松比,其中最大的负泊松比是五重石墨烯的两倍,是硼烯的三倍。负泊松比源于晶格对称性和 Si-O 四面体对称性的相互作用。硅片也是一种绝缘的二维材料,在报道的二维结构中具有最高的电子能带隙(>7 eV)。这些具有面内负泊松比和最宽能带隙的奇异二维硅石有望在纳米力学和纳米电子学中具有巨大的应用潜力。

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