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基于氧化锌掺杂聚芴的闪存器件及双稳态非易失性电阻开关特性

Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO.

作者信息

Huang Jiahe, Zhao Xiaofeng, Zhang Hongyan, Bai Ju, Wang Shuhong, Wang Cheng, Ma Dongge, Hou Yanjun

机构信息

School of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China

School of Electronic Engineering, Heilongjiang University Harbin 150080 P. R. China.

出版信息

RSC Adv. 2019 Mar 27;9(17):9392-9400. doi: 10.1039/c9ra00405j. eCollection 2019 Mar 22.

DOI:10.1039/c9ra00405j
PMID:35520703
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9062018/
Abstract

In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. - characteristics of the device were studied, and the effects of ZnO nanoparticle (NP) doping content on the performances of the device were discussed. The best doping content of ZnO NPs was found by processing the experimental results (4.76 wt%). Also, the stability of the device was tested, and it was found that the device remained stable after a long testing period. Furthermore, the switching mechanism of the device was discussed.

摘要

在本研究中，通过铃木反应合成了聚（9,9-二辛基芴-2,7-二亚基）（PFO），并对其进行了表征。采用旋涂技术制备了基于PFO和PFO:ZnO的三明治型存储器件。研究了该器件的特性，并讨论了ZnO纳米颗粒（NP）掺杂含量对器件性能的影响。通过处理实验结果（4.76 wt%）找到了ZnO NPs的最佳掺杂含量。此外，测试了器件的稳定性，发现该器件在长时间测试后仍保持稳定。此外，还讨论了器件的开关机制。

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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/55ee/9062018/da317e4718dc/c9ra00405j-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/55ee/9062018/997de2fe38f7/c9ra00405j-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/55ee/9062018/ffe2f3a93605/c9ra00405j-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/55ee/9062018/605b4ee66329/c9ra00405j-f9.jpg
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