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[2,2'-联噻吩]-4,4'-二甲酰胺:一种用于半导体聚合物的新型结构单元。

[2,2'-Bithiophene]-4,4'-dicarboxamide: a novel building block for semiconducting polymers.

作者信息

Zhou Xiaocheng, Zhang Zhifang, Hendsbee Arthur D, Ngai Jenner H L, Kumar Pankaj, Ye Shuyang, Seferos Dwight S, Li Yuning

机构信息

Department of Chemical Engineering/Waterloo Institute for Nanotechnology (WIN), University of Waterloo 200 University Ave West Waterloo ON N2L 3G1 Canada

Lash Miller Chemical Laboratories, Department of Chemistry, University of Toronto 80 St. George Street Toronto Ontario M5S 3H6 Canada.

出版信息

RSC Adv. 2019 Sep 25;9(52):30496-30502. doi: 10.1039/c9ra06909g. eCollection 2019 Sep 23.

Abstract

A novel electron deficient building block [2,2'-bithiophene]-4,4'-dicarboxamide (BTDCA) was designed to lower the highest occupied molecular orbital (HOMO) energy level of polythiophenes in order to achieve a higher open circuit voltage ( ) and thus a higher power conversion efficiency in polymer solar cells (PSCs). BTDCA dibromo monomers were conveniently synthesized in four steps, and were used to prepare three thiophene-based D-A polymers, P(BTDCA66-BT) (66BT), P(BTDCA44-BT) (44BT) and P(BTDCA44-TT) (44TT). All the polymers exhibited unipolar hole transport properties, exhibiting mobilities in the range of ∼10 to 10 cm V s with the highest hole mobility of up to 1.43 × 10 cm V s achieved for 44BT in bottom-gate bottom-contact organic thin film transistors (OTFTs). In PSCs, these polymers achieved high 's of 0.81-0.87 V when PCBM or ITIC was used as acceptor. When 44TT was used as donor and ITIC was used as acceptor, a power conversion efficiency (PCE) of up to 4.5% was obtained, a significant improvement when compared with the poly(3-hexylthiophene) (P3HT):ITIC devices, which showed the highest PCE of merely 0.92%.

摘要

设计了一种新型缺电子结构单元[2,2'-联噻吩]-4,4'-二甲酰胺(BTDCA),以降低聚噻吩的最高占据分子轨道(HOMO)能级,从而在聚合物太阳能电池(PSC)中实现更高的开路电压( ),进而提高功率转换效率。BTDCA二溴单体通过四步方便地合成,并用于制备三种基于噻吩的给体-受体(D-A)聚合物,即P(BTDCA66-BT)(66BT)、P(BTDCA44-BT)(44BT)和P(BTDCA44-TT)(44TT)。所有聚合物均表现出单极性空穴传输特性,在底栅底接触有机薄膜晶体管(OTFT)中,迁移率范围为~10 至10 cm² V⁻¹ s⁻¹,44BT的最高空穴迁移率达到1.43×10⁻³ cm² V⁻¹ s⁻¹。在PSC中,当使用PCBM或ITIC作为受体时,这些聚合物实现了0.81 - 0.87 V的高开路电压。当使用44TT作为给体且ITIC作为受体时,获得了高达4.5%的功率转换效率(PCE),与聚(3-己基噻吩)(P3HT):ITIC器件相比有显著提高,后者显示的最高PCE仅为0.92%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/57c2/9072092/643e1bce631e/c9ra06909g-f1.jpg

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