Lamagni Paolo, Pedersen Birgitte Lodberg, Godiksen Anita, Mossin Susanne, Hu Xin-Ming, Pedersen Steen Uttrup, Daasbjerg Kim, Lock Nina
Carbon Dioxide Activation Center (CADIAC), Interdisciplinary Nanoscience Center (iNANO) and Dept. of Chemistry, Aarhus University Gustav Wieds Vej 14 DK-8000 Aarhus C Denmark
Dept. of Chemistry, Technical University of Denmark Kemitorvet, DK-2800 Kgs. Lyngby Denmark.
RSC Adv. 2018 Apr 16;8(25):13921-13932. doi: 10.1039/c8ra02439a. eCollection 2018 Apr 11.
A general approach to prepare composite films of metal-organic frameworks and graphene has been developed. Films of copper(ii)-based HKUST-1 and HKUST-1/graphene composites were grown solvothermally on glassy carbon electrodes. The films were chemically tethered to the substrate by diazonium electrografting resulting in a large electrode coverage and good stability in solution for electrochemical studies. HKUST-1 has poor electrical conductivity, but we demonstrate that the addition of graphene to HKUST-1 partially restores the electrochemical activity of the electrodes. The enhanced activity, however, does not result in copper(ii) to copper(i) reduction in HKUST-1 at negative potentials. The materials were characterised in-depth: microscopy and grazing incidence X-ray diffraction demonstrate uniform films of crystalline HKUST-1, and Raman spectroscopy reveals that graphene is homogeneously distributed in the films. Gas sorption studies show that both HKUST-1 and HKUST-1/graphene have a large CO/N selectivity, but the composite has a lower surface area and CO adsorption capacity in comparison with HKUST-1, while CO binds stronger to the composite at low pressures. Electron paramagnetic resonance spectroscopy reveals that both monomeric and dimeric copper units are present in the materials, and that the two materials behave differently upon hydration, HKUST-1/graphene reacts slower by interaction with water. The changed gas/vapour sorption properties and the improved electrochemical activity are two independent consequences of combining graphene with HKUST-1.
一种制备金属有机框架与石墨烯复合薄膜的通用方法已经开发出来。基于铜(II)的HKUST-1薄膜以及HKUST-1/石墨烯复合材料薄膜通过溶剂热法生长在玻碳电极上。通过重氮盐电接枝将薄膜化学连接到基底上,从而在电化学研究中实现了大的电极覆盖面积以及在溶液中的良好稳定性。HKUST-1的电导率较差,但我们证明向HKUST-1中添加石墨烯可部分恢复电极的电化学活性。然而,增强的活性并不会导致HKUST-1在负电位下铜(II)还原为铜(I)。对这些材料进行了深入表征:显微镜和掠入射X射线衍射表明结晶HKUST-1薄膜均匀,拉曼光谱显示石墨烯在薄膜中均匀分布。气体吸附研究表明,HKUST-1和HKUST-1/石墨烯都具有较大的CO/N选择性,但与HKUST-1相比,复合材料的表面积和CO吸附容量较低,而在低压下CO与复合材料的结合更强。电子顺磁共振光谱表明材料中同时存在单体和二聚体铜单元,并且两种材料在水合作用下表现不同,HKUST-1/石墨烯与水相互作用的反应较慢。石墨烯与HKUST-1结合产生了两个独立的结果,即气体/蒸汽吸附性能的改变和电化学活性的提高。