Zeng Yi, Chen Weibing, Tang Bin, Liao Jianhui, Lou Jun, Chen Qing
Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University Beijing 100871 China
Department of Materials Science and NanoEngineering, Rice University Houston Texas 77005 USA
RSC Adv. 2018 Jun 28;8(42):23591-23598. doi: 10.1039/c8ra03779e. eCollection 2018 Jun 27.
The weak light-absorption and low quantum yield (QY) in monolayer MoS are great challenges for the applications of this material in practical optoelectronic devices. Here, we report on a synergistic strategy to obtain highly enhanced photoluminescence (PL) of monolayer MoS by simultaneously improving the intensity of the electromagnetic field around MoS and the QY of MoS. Self-assembled sub-monolayer Au nanoparticles underneath the monolayer MoS and bis(trifluoromethane)sulfonimide (TFSI) treatment to the MoS surface are used to boost the excitation field and the QY, respectively. An enhancement factor of the PL intensity as high as 280 is achieved. The enhancement mechanisms are analyzed by inspecting the contribution of the PL spectra from A excitons and A trions under different conditions. Our study takes a further step to developing high-performance optoelectronic devices based on monolayer MoS.
单层二硫化钼(MoS)的弱光吸收和低量子产率(QY)对这种材料在实际光电器件中的应用构成了巨大挑战。在此,我们报道了一种协同策略,通过同时提高MoS周围的电磁场强度和MoS的量子产率来获得单层MoS高度增强的光致发光(PL)。在单层MoS下方自组装亚单层金纳米颗粒,并对MoS表面进行双(三氟甲烷)磺酰亚胺(TFSI)处理,分别用于增强激发场和量子产率。实现了高达280的PL强度增强因子。通过检查不同条件下A激子和A三重态激子对PL光谱的贡献来分析增强机制。我们的研究朝着开发基于单层MoS的高性能光电器件又迈进了一步。