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用于薄膜电容器的改性埃洛石纳米管填充聚酰亚胺复合材料:高介电常数、低介电损耗及优异的耐热性。

Modified halloysite nanotube filled polyimide composites for film capacitors: high dielectric constant, low dielectric loss and excellent heat resistance.

作者信息

Zhu Tianwen, Qian Chao, Zheng Weiwen, Bei Runxin, Liu Siwei, Chi Zhenguo, Chen Xudong, Zhang Yi, Xu Jiarui

机构信息

PCFM Lab, GD HPPC Lab, Guangdong Engineering Technology Research Centre for High-performance Organic, Polymer Photoelectric Functional Films, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry, Sun Yat-sen University Guangzhou 510275 China

出版信息

RSC Adv. 2018 Mar 15;8(19):10522-10531. doi: 10.1039/c8ra01373j. eCollection 2018 Mar 13.

Abstract

In this work, halloysite nanotubes (HNTs) were chosen as the fillers and high performance polyimide (PI) as the matrix to form a series of dielectric composite materials with high dielectric constant, low dielectric loss and excellent heat resistance. Firstly, KH550 was used to modify the surface of HNTs to make sure of a good dispersion of HNTs into the polymer. The results showed that the addition of KH550 modified HNTs (K-HNTs) can improve the dielectric constant of the composite films while maintaining their excellent dielectric loss properties. To further increase the dielectric constant of the HNTs/PI composites, conductive polyaniline (PANI) was used to coat the surface of HNTs to obtain PANI modified HNTs (PANI-HNTs). Compared with the K-HNTs filled systems, the dielectric constant of the PANI-HNTs/PI nanocomposite films is greatly enhanced. The highest dielectric constant of the PANI-HNTs/PI films can achieve 17.3 (100 Hz) with a low dielectric loss of 0.2 (100 Hz). More importantly, the as-prepared composite films have high breakdown strengths (>110.4 kV mm) and low coefficients of thermal expansion, as low as 7 ppm per °C, and a maximum discharge energy density of 0.93 J cm. Also, such properties are maintained stably up to 300 °C, which is critical for manufacturing heat-resisting film capacitors.

摘要

在本工作中,选择埃洛石纳米管(HNTs)作为填料,高性能聚酰亚胺(PI)作为基体,以形成一系列具有高介电常数、低介电损耗和优异耐热性的介电复合材料。首先,使用KH550对HNTs的表面进行改性,以确保HNTs在聚合物中良好分散。结果表明,添加KH550改性的HNTs(K-HNTs)可以提高复合薄膜的介电常数,同时保持其优异的介电损耗性能。为了进一步提高HNTs/PI复合材料的介电常数,使用导电聚苯胺(PANI)包覆HNTs的表面,以获得PANI改性的HNTs(PANI-HNTs)。与K-HNTs填充体系相比,PANI-HNTs/PI纳米复合薄膜的介电常数得到了极大提高。PANI-HNTs/PI薄膜的最高介电常数在100 Hz时可达17.3,介电损耗低至0.2(100 Hz)。更重要的是,所制备的复合薄膜具有高击穿强度(>110.4 kV/mm)和低热膨胀系数,低至7 ppm/°C,最大放电能量密度为0.93 J/cm³。此外,这些性能在高达300°C时仍能稳定保持,这对于制造耐热薄膜电容器至关重要。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/49b5/9078885/c956c2e42910/c8ra01373j-f1.jpg

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