College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China.
Jiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Materials Science and Engineering, Nanjing Forestry University, Nanjing 210037, China.
Molecules. 2022 Dec 14;27(24):8896. doi: 10.3390/molecules27248896.
Materials with outstanding mechanical properties and excellent dielectric properties are increasingly favored in the microelectronics industry. The application of polyimide (PI) in the field of microelectronics is limited because of the fact that PI with excellent mechanical properties does not have special features in the dielectric properties. In this work, PI composite films with high dielectric properties and excellent mechanical properties are fabricated by in-situ reduction of fluorinated graphene (FG) in polyamide acid (PAA) composites. The dielectric permittivity of pure PI is 3.47 and the maximum energy storage density is 0.664 J/cm at 100 Hz, while the dielectric permittivity of the PI composite films reaches 235.74 under the same conditions, a 68-times increase compared to the pure PI, and the maximum energy storage density is 5.651, a 9-times increase compared to the pure PI films. This method not only solves the problem of the aggregation of the filler particles in the PI matrix and maintains the intrinsic excellent mechanical properties of the PI, but also significantly improves the dielectric properties of the PI.
具有优异力学性能和介电性能的材料在微电子行业中越来越受到青睐。聚酰亚胺（PI）在微电子领域的应用受到限制，因为具有优异力学性能的 PI 在介电性能方面没有特殊性能。在这项工作中，通过聚酰胺酸（PAA）复合材料中原位还原氟化石墨烯（FG），制备出具有高介电性能和优异力学性能的 PI 复合薄膜。在 100 Hz 下，纯 PI 的介电常数为 3.47，储能密度最大值为 0.664 J/cm3，而 PI 复合薄膜的介电常数在相同条件下达到 235.74，是纯 PI 的 68 倍，储能密度最大值为 5.651，是纯 PI 薄膜的 9 倍。该方法不仅解决了填料颗粒在 PI 基体中的团聚问题，保持了 PI 的固有优异力学性能，而且显著提高了 PI 的介电性能。
