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具有超高击穿场强、低介电损耗和高储能密度的芳香族聚硫脲电介质。

Aromatic polythiourea dielectrics with ultrahigh breakdown field strength, low dielectric loss, and high electric energy density.

机构信息

Department of Electrical Engineering and the Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA.

出版信息

Adv Mater. 2013 Mar 25;25(12):1734-8. doi: 10.1002/adma.201204072. Epub 2013 Jan 14.

Abstract

The promise of aromatic, amorphous, polar polymers containing high dipolar moments with very low defect levels is demonstrated for future dielectric materials with ultrahigh electric-energy density, low loss at high applied fields, and ultrahigh breakdown strengths. Specifically, aromatic polythiourea films exhibit an ultrahigh breakdown field (>1 GV m(-1)), which results in an energy density of ≈22 J cm(-3), as well as a low loss.

摘要

具有高偶极矩和极低缺陷水平的芳香族、无定形、极性聚合物的前景,为未来具有超高电能密度、高应用场下低损耗和超高击穿强度的介电材料提供了可能。具体来说,芳香族聚硫脲薄膜具有超高击穿场(>1 GV m(-1)),从而实现了约 22 J cm(-3)的能量密度,同时损耗也较低。

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