Li Bin, Sun Qi, Wang Shaoying, Guo Heng, Huang Xiaoyong
Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, College of Physics and Optoelectronics, Taiyuan University of Technology Taiyuan 030024 PR China
RSC Adv. 2018 Mar 9;8(18):9879-9886. doi: 10.1039/c8ra01322e. eCollection 2018 Mar 5.
Novel blue-green-emitting CaGd(AlO)(BO):Ce,Tb phosphors were successfully synthesized traditional high temperature solid reaction method. X-ray diffraction, luminescence spectroscopy, fluorescence decay time and fluorescent thermal stability tests have been used to characterize the as-prepared samples. The energy transfer from Ce to Tb ions in the CaGd(AlO)(BO) host has been demonstrated to be by dipole-dipole interaction, and the energy transfer efficiency reached as high as 83.6% for CaGd(AlO)(BO):0.01Ce,0.6Tb. The critical distance was calculated to be 9.44 Å according to the concentration quenching method. The emission colour of the obtained phosphors can be tuned appropriately from deep blue (0.169, 0.067) to green (0.347, 0.494) through increasing the doping concentrations of Tb. Moreover, the CaGd(AlO)(BO):0.01Ce,0.6Tb phosphor possessed excellent thermal stability at high temperature, and the emission intensity at 423 K was about 87% of that at 303 K. Finally, the fabricated prototype LED device with a BaMgAlO:Eu blue phosphor, CaAlSiN:Eu red phosphor, CaGd(AlO)(BO):0.01Ce,0.6Tb green phosphor and 365 nm-emitting InGaN chip exhibited bright warm white light. The current study shows that CaGd(AlO)(BO):0.01Ce,0.6Tb can be used as a potential green phosphor for white LEDs.
采用传统高温固相反应法成功合成了新型蓝绿色发光的CaGd(AlO)(BO):Ce,Tb荧光粉。利用X射线衍射、发光光谱、荧光衰减时间和荧光热稳定性测试对所制备的样品进行了表征。结果表明,CaGd(AlO)(BO)基质中Ce到Tb离子的能量转移是通过偶极-偶极相互作用实现的,对于CaGd(AlO)(BO):0.01Ce,0.6Tb,能量转移效率高达83.6%。根据浓度猝灭法计算出临界距离为9.44 Å。通过增加Tb的掺杂浓度,所制备荧光粉的发射颜色可从深蓝色(0.169, 0.067)适当调节至绿色(0.347, 0.494)。此外,CaGd(AlO)(BO):0.01Ce,0.6Tb荧光粉在高温下具有优异的热稳定性,423 K时的发射强度约为303 K时的87%。最后,采用BaMgAlO:Eu蓝色荧光粉、CaAlSiN:Eu红色荧光粉、CaGd(AlO)(BO):0.01Ce,0.6Tb绿色荧光粉和365 nm发光的InGaN芯片制备的原型LED器件发出明亮的暖白光。当前研究表明,CaGd(AlO)(BO):0.01Ce,0.6Tb可作为一种潜在的白光LED绿色荧光粉。