Kim Ho-Jong, Kim Daehee, Jung Suyong, Bae Myung-Ho, Yi Sam Nyung, Watanabe Kenji, Taniguchi Takashi, Chang Soo Kyung, Ha Dong Han
Quantum Technology Institute, Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea
Department of Physics, Yonsei University Seoul 03722 Republic of Korea.
RSC Adv. 2018 Apr 6;8(23):12900-12906. doi: 10.1039/c8ra01849a. eCollection 2018 Apr 3.
We investigated the homogeneity and tolerance to heat of monolayer MoS using photoluminescence (PL) spectroscopy. For MoS on SiO, the PL spectra of the basal plane differ from those of the edge, but MoS on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS on SiO homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS on SiO. We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS to heat on the basis of interlayer/interfacial binding energy.
我们使用光致发光（PL）光谱研究了单层MoS的均匀性和热耐受性。对于SiO上的MoS，基面的PL光谱与边缘的不同，但六方氮化硼（h-BN）上的MoS在整个区域具有均匀的PL光谱且电子耗尽。在450°C退火通过产生大量缺陷使SiO上的MoS在整个区域均匀地电子耗尽；此外，在550°C退火并随后对MoS单层进行激光照射会导致其固有晶体结构丧失。另一方面，h-BN上的单层MoS在高达550°C时得以保留，其PL光谱与SiO上的MoS相比变化不大。我们进行了一项实验，定性比较各层之间的结合能，并基于层间/界面结合能讨论单层MoS的热耐受性。
