Hoi Bui D, Phuong Le T T, Lam Vo T, Khoa Doan Q, Tien Tran, Binh Nguyen T T, Phuc Huynh V, Hieu Nguyen N, Nguyen Chuong V
Department of Physics, University of Education, Hue University 34 Le Loi Hue City Vietnam
Faculty of Natural Sciences Pedagogy, Sai Gon University 273 An Duong Vuong Str., District 5 Ho Chi Minh City Vietnam.
RSC Adv. 2019 Dec 16;9(71):41569-41580. doi: 10.1039/c9ra08446k. eCollection 2019 Dec 13.
In this paper, the potential of engineering and manipulating the electronic heat capacity and Pauli susceptibility of pristine and perturbed hydrogenated AA-stacked graphene, SiC (silicon carbide), and h-BN (hexagonal boron nitride) bilayers is studied using a designed transverse Zeeman magnetic field and the dilute charged impurity. The tight-binding Hamiltonian model, the Born approximation and the Green's function method describe the carrier dynamics up to a certain degree. The unperturbed results show that the heat capacity and susceptibility of all bilayers increase with different hydrogenation doping configurations. We also found that the maximum heat capacity and susceptibility relates to the chair-like and table-like configurations. Also, the graphene possesses the highest activity compared to SiC and h-BN lattices due to its zero on-site energies. For the Zeeman magnetic field-induced Schottky anomaly and the Néel temperature corresponding to the maximum electronic heat capacity, EHC, and Pauli spin paramagnetic susceptibility, PSPS, respectively, the EHC (PSPS) decreases (increases) with the Zeeman field. On the other hand, the corresponding results for and lattices illustrate that both EHC and PSPS decrease with the Zeeman field, on average. However, under the influence of the dilute charged impurity, the pristine EHC of graphene (SiC and h-BN) decreases (increases) with impurity concentration for all configurations while the corresponding PSPS fluctuates (decreases) for the pristine (reduced table-like and reduced chair-like) case. These findings introduce hydrogenated AA-stacked bilayers as versatile candidates for real applications.
在本文中，我们利用设计的横向塞曼磁场和稀带电杂质，研究了对原始和受扰的氢化AA堆叠石墨烯、碳化硅（SiC）和六方氮化硼（h-BN）双层进行工程设计并调控其电子热容和泡利磁化率的潜力。紧束缚哈密顿模型、玻恩近似和格林函数方法在一定程度上描述了载流子动力学。未受扰结果表明，所有双层的热容和磁化率随不同的氢化掺杂构型而增加。我们还发现，最大热容和磁化率与椅式和桌式构型有关。此外，由于石墨烯的零在位能，与SiC和h-BN晶格相比，它具有最高的活性。对于分别对应于最大电子热容（EHC）和泡利自旋顺磁磁化率（PSPS）的塞曼磁场诱导的肖特基异常和奈尔温度，EHC（PSPS）随塞曼场减小（增加）。另一方面，SiC和h-BN晶格的相应结果表明，平均而言，EHC和PSPS都随塞曼场减小。然而，在稀带电杂质的影响下，对于所有构型，石墨烯（SiC和h-BN）的原始EHC随杂质浓度降低（增加），而对于原始（减少的桌式和减少的椅式）情况，相应的PSPS波动（减小）。这些发现表明氢化AA堆叠双层是实际应用中的通用候选材料。
