• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

核壳结构InGaN/GaN纳米棒产生强红外辐射的研究现状与前景

State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods.

作者信息

Evropeitsev Evgenii A, Kazanov Dmitrii R, Robin Yoann, Smirnov Alexander N, Eliseyev Ilya A, Davydov Valery Yu, Toropov Alexey A, Nitta Shugo, Shubina Tatiana V, Amano Hiroshi

机构信息

Ioffe Institute, 26 Politekhnicheskaya, St Petersburg, Russia, 194021.

Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, Japan.

出版信息

Sci Rep. 2020 Nov 4;10(1):19048. doi: 10.1038/s41598-020-76042-0.

DOI:10.1038/s41598-020-76042-0
PMID:33149244
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7643183/
Abstract

Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multi-color displays. Such applications, however, are still a challenge because intensity of the red band is too weak compared with blue and green. To clarify this problem, we measured photoluminescence of different NRs, depending on power and temperature, as well as with time resolution. These studies have shown that dominant emission bands come from nonpolar and semipolar QWs, while a broad yellow-red band arises mainly from defects in the GaN core. An emission from polar QWs located at the NR tip is indistinguishable against the background of defect-related luminescence. Our calculations of electromagnetic field distribution inside the NRs show a low density of photon states at the tip, which additionally suppresses the radiation of polar QWs. We propose placing polar QWs inside a cylindrical part of the core, where the density of photon states is higher and the well area is much larger. Such a hybrid design, in which the excess of blue radiation from shell QWs is converted to red radiation in core wells, can help solve the urgent problem of red light for many applications of NRs.

摘要

具有氮化铟镓/氮化镓量子阱(QW)的核壳纳米棒(NR)有望用于单片白光发光二极管和多色显示器。然而,此类应用仍然是一个挑战,因为与蓝色和绿色相比,红色波段的强度太弱。为了阐明这个问题,我们测量了不同纳米棒的光致发光,这取决于功率、温度以及时间分辨率。这些研究表明,主要发射带来自非极性和半极性量子阱,而一个宽的黄红色带主要源于氮化镓核中的缺陷。位于纳米棒尖端的极性量子阱的发射在与缺陷相关的发光背景下难以区分。我们对纳米棒内部电磁场分布的计算表明,尖端处的光子态密度较低,这进一步抑制了极性量子阱的辐射。我们建议将极性量子阱放置在核的圆柱形部分内,此处光子态密度较高且阱面积大得多。这种混合设计,即壳层量子阱中多余的蓝光辐射在核量子阱中转换为红光辐射,有助于解决纳米棒许多应用中急需的红光问题。

相似文献

1
State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods.核壳结构InGaN/GaN纳米棒产生强红外辐射的研究现状与前景
Sci Rep. 2020 Nov 4;10(1):19048. doi: 10.1038/s41598-020-76042-0.
2
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes.深入了解多色氮化铟镓/氮化镓纳米棒发光二极管的性能。
Sci Rep. 2018 May 9;8(1):7311. doi: 10.1038/s41598-018-25473-x.
3
Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core-shell nanorods.不同极性核壳纳米棒中 InGaN/GaN 量子阱的局域化和瞬态发射特性。
Nanoscale. 2018 Dec 20;11(1):193-199. doi: 10.1039/c8nr05863f.
4
Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.GaN/InGaN 核壳纳米线发光二极管阵列中量子阱的三维测绘。
Nano Lett. 2013 Sep 11;13(9):4317-25. doi: 10.1021/nl4021045. Epub 2013 Aug 12.
5
Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.嵌入三维发光二极管中的氮化铟镓/氮化镓核壳纳米棒的发射特性
Nanoscale Res Lett. 2016 Dec;11(1):215. doi: 10.1186/s11671-016-1441-6. Epub 2016 Apr 22.
6
Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array.具有 InGaN/GaN 量子阱纳米棒发光二极管阵列规则图案化生长的发光器件。
Opt Lett. 2013 Sep 1;38(17):3370-3. doi: 10.1364/OL.38.003370.
7
Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).非极性和半极性氮化铟镓发光二极管(LED)的最新进展
J Nanosci Nanotechnol. 2015 Mar;15(3):1895-906. doi: 10.1166/jnn.2015.10327.
8
Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods.氢钝化:一种提高InGaN/GaN单量子阱纳米棒光学和光电化学性能的有效策略。
Nanotechnology. 2020 Nov 20;31(47):475201. doi: 10.1088/1361-6528/aba301.
9
Nanoscopic Insights into InGaN/GaN Core-Shell Nanorods: Structure, Composition, and Luminescence.纳米级视角下的 InGaN/GaN 核壳纳米棒:结构、组成与发光。
Nano Lett. 2016 Sep 14;16(9):5340-6. doi: 10.1021/acs.nanolett.6b01062. Epub 2016 Aug 16.
10
Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period InGaN/GaN Quantum Wells of Blue LEDs.蓝光发光二极管八周期InGaN/GaN量子阱形成软限制势的生长序列中量子势垒的最佳硅掺杂层
Nanoscale Res Lett. 2017 Nov 9;12(1):591. doi: 10.1186/s11671-017-2359-3.

引用本文的文献

1
Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs.同轴GaInN/GaN多量子壳层纳米线发光二极管的多色发射识别。
Nanoscale Adv. 2021 Oct 13;4(1):102-110. doi: 10.1039/d1na00299f. eCollection 2021 Dec 21.

本文引用的文献

1
A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure.一种采用混合同轴和单轴 InGaN/GaN 多量子阱纳米结构制造的 III 族氮化物纳米线太阳能电池。
RSC Adv. 2018 Jun 5;8(37):20585-20592. doi: 10.1039/c8ra03127d.
2
Two yellow luminescence bands in undoped GaN.未掺杂的氮化镓中的两个黄色发光带。
Sci Rep. 2018 May 25;8(1):8091. doi: 10.1038/s41598-018-26354-z.
3
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes.深入了解多色氮化铟镓/氮化镓纳米棒发光二极管的性能。
Sci Rep. 2018 May 9;8(1):7311. doi: 10.1038/s41598-018-25473-x.
4
Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging.通过阴极发光高光谱成像分析单个 InGaN/GaN 纳米棒的多波长发射。
Sci Rep. 2018 Jan 29;8(1):1742. doi: 10.1038/s41598-018-20142-5.
5
Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra.具有同质集成的基于 InGaN 的量子阱的 LED 的花状内部发射分布,发射窄带蓝、绿和红光谱。
Sci Rep. 2017 Aug 2;7(1):7164. doi: 10.1038/s41598-017-07808-2.
6
White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.在具有截顶六棱锥的氮化镓模板上生长的非平面氮化铟镓/氮化镓多量子阱发光二极管发出的白色光。
Opt Express. 2015 Apr 6;23(7):A401-12. doi: 10.1364/OE.23.00A401.
7
Toward highly radiative white light emitting nanostructures: a new approach to dislocation-eliminated GaN/InGaN core-shell nanostructures with a negligible polarization field.迈向高辐射白光发射纳米结构:一种消除位错的GaN/InGaN核壳纳米结构的新方法,其极化场可忽略不计。
Nanoscale. 2014 Nov 6;6(23):14213-20. doi: 10.1039/c4nr03365e.
8
Visible-color-tunable light-emitting diodes.可见光颜色可调的发光二极管。
Adv Mater. 2011 Aug 2;23(29):3284-8. doi: 10.1002/adma.201100806. Epub 2011 Jun 3.
9
Inhibited spontaneous emission by a Rydberg atom.里德堡原子对自发辐射的抑制
Phys Rev Lett. 1985 Nov 11;55(20):2137-2140. doi: 10.1103/PhysRevLett.55.2137.