Younis Adnan, Li Sean
School of Materials Science and Engineering, University of New South Wales Sydney 2052 NSW Australia
RSC Adv. 2018 Aug 13;8(50):28763-28774. doi: 10.1039/c8ra05340e. eCollection 2018 Aug 7.
Resistive switching memories have been regarded as one of the most up and coming memory systems and researchers have shown great interest in them because of their simple structure, high speed and low fabrication cost. These memory systems also have great potential for scaling, however, this has been difficult to achieve without detailed understanding of underlying switching mechanisms. Meanwhile, scaling down could also raise reliability concerns in its performance. This work provides an overview of various switching mechanisms and their investigations at nanoscale levels using high resolution microscopy techniques. In this mini review, the main focus was to understand the working mechanism derived from the so-called filament model. The high resolution conductive atomic force microscope, transmission electron microscope and scanning electron microscopes are the best tools available to investigate the dynamics of filamentary switching. Several issues with the existing techniques are also highlighted.
阻变存储器被认为是最具发展潜力的存储系统之一,因其结构简单、速度快且制造成本低,研究人员对其表现出了浓厚兴趣。这些存储系统在缩放方面也具有巨大潜力,然而,在没有详细了解底层开关机制的情况下,这很难实现。同时,缩小尺寸也可能引发对其性能可靠性的担忧。这项工作概述了各种开关机制以及使用高分辨率显微镜技术在纳米尺度上对它们的研究。在这篇小型综述中,主要重点是理解源自所谓丝状模型的工作机制。高分辨率导电原子力显微镜、透射电子显微镜和扫描电子显微镜是研究丝状开关动力学的最佳可用工具。还强调了现有技术存在的几个问题。