Younis Adnan, Chu Dewei, Li Sean
School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, NSW, Australia.
Sci Rep. 2015 Sep 1;5:13599. doi: 10.1038/srep13599.
Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device's retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.
高性能微电子器件的进一步发展依赖于新型材料和器件架构的开发。然而，目前使用的组件和设计已达到其物理极限。需要从器件制造到性能评估进行深入的研究工作，以克服这些限制。在本文中，我们证明了基于CeO2:Gd的存储器件的优异双极电阻开关特性可以通过紫外线辐射进行调控，这成为了一个新的自由度。此外，发现基于金属氧化物（CeO2:Gd）的存储器件具有电学和神经形态多功能性。为了研究该器件潜在的开关机制，通过施加弱编程条件研究了其可塑性行为。此外，还实现了类似于人类大脑遗忘过程的短期到长期记忆转变，这被认为是信息处理和数据存储的关键生物突触功能。基于对该器件在高温下保持行为的仔细研究，可以从一个新的角度理解此类器件中开关的丝状性质。
