Jaskólski W, Ayuela A
Faculty of Physics, Astronomy and Informatics, Institute of Physics, Nicolaus Copernicus University Grudziadzka 5 87-100 Toruń Poland
Donostia International Physics Center (DIPC) Manuel de Lardizabal 4 E-20018 San Sebastián Spain.
RSC Adv. 2019 Dec 19;9(72):42140-42144. doi: 10.1039/c9ra07319a. eCollection 2019 Dec 18.
Gated bilayer graphene exhibits spin-degenerate gapless states with a topological character localized at stacking domain walls. These states allow for one-dimensional currents along the domain walls. We herein demonstrate that these topologically protected currents are spin-polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects. The magnetic defects, which we model as π-vacancies, perturb the topological states but also lift their spin degeneracy. One gapless state survives the perturbation of these defects, and its spin polarization is largely localized in one layer. The spin-polarized current in the topological state flows in a single layer, and this finding suggests the possibility of effectively exploiting these states in spintronic applications.
门控双层石墨烯表现出具有拓扑特征的自旋简并无隙态，这些态局域在堆垛畴壁处。这些态允许沿畴壁的一维电流。我们在此证明，当双层石墨烯包含装饰有磁性缺陷的堆垛畴壁时，这些拓扑保护电流是自旋极化的且锁定在单层中。我们将磁性缺陷建模为π空位，它们会扰动拓扑态，但也会解除其自旋简并。一个无隙态在这些缺陷的扰动下幸存下来，并且其自旋极化主要局域在一层中。拓扑态中的自旋极化电流在单层中流动，这一发现表明在自旋电子学应用中有效利用这些态的可能性。
