• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

双层石墨烯中的堆积边界和输运。

Stacking boundaries and transport in bilayer graphene.

机构信息

Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, 28049 Madrid, Spain.

出版信息

Nano Lett. 2014;14(4):2052-7. doi: 10.1021/nl500230a. Epub 2014 Mar 12.

DOI:10.1021/nl500230a
PMID:24605877
Abstract

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few millielectronvolts. This behavior has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties with a minimal conductivity of the order of 2e(2)/h. Here, we propose an explanation for this dichotomy, which is unrelated to electron interactions and based instead on the reversible formation of boundaries between stacking domains ("solitons"). We argue, using a numerical analysis, that the hallmark features of the previously inferred many-body insulating state can be explained by scattering on boundaries between domains with different stacking order (AB and BA). We furthermore present experimental evidence, reinforcing our interpretation, of reversible switching between a metallic and an insulating regime in suspended bilayers when subjected to thermal cycling or high current annealing.

摘要

原始的双层石墨烯在某些情况下表现为具有几毫电子伏特传输间隙的绝缘体。这种行为被解释为多体相关性引起的固有电子不稳定性的结果。然而,有趣的是,一些具有类似迁移率的样品表现出良好的金属性质,其最小电导率约为 2e(2)/h。在这里,我们提出了一种解释这种二分法的方法,这种方法与电子相互作用无关,而是基于堆叠畴之间的边界(“孤子”)的可逆形成。我们使用数值分析来论证,先前推断出的多体绝缘状态的显著特征可以通过在具有不同堆叠顺序(AB 和 BA)的畴之间的边界上的散射来解释。此外,我们还提出了实验证据,当悬浮双层石墨烯经受热循环或高电流退火时,在金属和绝缘状态之间的可逆切换,增强了我们的解释。

相似文献

1
Stacking boundaries and transport in bilayer graphene.双层石墨烯中的堆积边界和输运。
Nano Lett. 2014;14(4):2052-7. doi: 10.1021/nl500230a. Epub 2014 Mar 12.
2
Polycrystallinity and stacking in CVD graphene.CVD 石墨烯中的多晶型和堆叠。
Acc Chem Res. 2013 Oct 15;46(10):2286-96. doi: 10.1021/ar300190z.
3
Weak localization in bilayer graphene with Li-intercalation/desorption.
J Phys Condens Matter. 2018 Aug 1;30(30):305701. doi: 10.1088/1361-648X/aaccc4. Epub 2018 Jun 14.
4
Lateral and flexural phonon thermal transport in graphene and stanene bilayers.石墨烯和锡烯双层中的横向和弯曲声子热输运。
Phys Chem Chem Phys. 2017 Mar 1;19(9):6554-6562. doi: 10.1039/c6cp08276a.
5
AC/AB stacking boundaries in bilayer graphene.双层石墨烯中的 AC/AB 堆叠边界。
Nano Lett. 2013 Jul 10;13(7):3262-8. doi: 10.1021/nl4013979. Epub 2013 Jun 18.
6
Plasmon Reflections by Topological Electronic Boundaries in Bilayer Graphene.双层石墨烯中拓扑电子边界的等离子体反射。
Nano Lett. 2017 Nov 8;17(11):7080-7085. doi: 10.1021/acs.nanolett.7b03816. Epub 2017 Oct 12.
7
Inhomogenous electronic structure, transport gap, and percolation threshold in disordered bilayer graphene.无序双层石墨烯中的非均匀电子结构、输运能隙和渗流阈值。
Phys Rev Lett. 2011 Oct 7;107(15):155502. doi: 10.1103/PhysRevLett.107.155502. Epub 2011 Oct 5.
8
Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.室温下具有高导通-关断电流比和大输运带隙的石墨烯场效应晶体管。
Nano Lett. 2010 Feb 10;10(2):715-8. doi: 10.1021/nl9039636.
9
Annealing and polycrystallinity effects on the thermal conductivity of supported CVD graphene monolayers.退火和多晶型效应对负载 CVD 石墨烯单层热导率的影响。
Nanoscale. 2017 Oct 19;9(40):15515-15524. doi: 10.1039/c7nr05346k.
10
Unique electronic and optical properties of stacking-modulated bilayer graphene under external magnetic fields.外磁场下堆叠调制双层石墨烯的独特电学和光学性质
Phys Chem Chem Phys. 2024 Jul 17;26(28):19316-19331. doi: 10.1039/d4cp01576b.

引用本文的文献

1
Momentum-locked spin between topological and defect states in 1D patterns on bilayer graphene.双层石墨烯上一维图案中拓扑态与缺陷态之间的动量锁定自旋。
Sci Rep. 2025 Aug 1;15(1):28058. doi: 10.1038/s41598-025-12215-z.
2
Electric Field-Defined Superlattices in Bilayer Graphene: Formation of Topological Bands in Two Dimensions.双层石墨烯中由电场定义的超晶格:二维拓扑能带的形成
Materials (Basel). 2025 Mar 28;18(7):1521. doi: 10.3390/ma18071521.
3
Gradient polaritonic surface with space-variant switchable light-matter interactions in 2D moiré superlattices.
二维莫尔超晶格中具有空间可变可切换光与物质相互作用的梯度极化激元表面
Sci Adv. 2024 Dec 13;10(50):eadq7445. doi: 10.1126/sciadv.adq7445.
4
Metal-Semiconductor Behavior along the Line of Stacking Order Change in Gated Multilayer Graphene.沿门控多层石墨烯堆叠顺序变化线的金属-半导体行为
Materials (Basel). 2024 Apr 21;17(8):1915. doi: 10.3390/ma17081915.
5
Emerging Characteristics and Properties of Moiré Materials.莫尔材料的新兴特性与性质
Nanomaterials (Basel). 2023 Oct 30;13(21):2881. doi: 10.3390/nano13212881.
6
Spin-layer locked gapless states in gated bilayer graphene.门控双层石墨烯中的自旋层锁定无隙态
RSC Adv. 2019 Dec 19;9(72):42140-42144. doi: 10.1039/c9ra07319a. eCollection 2019 Dec 18.
7
Tailoring spintronic and opto-electronic characteristics of bilayer AlN through MnO clusters intercalation; an study.通过MnO团簇插层调整双层AlN的自旋电子和光电特性;一项研究。
RSC Adv. 2021 Apr 22;11(25):15167-15176. doi: 10.1039/d1ra01532j. eCollection 2021 Apr 21.
8
Modulation of Magnetoresistance Polarity in BLG/SL-MoSe Heterostacks.双层石墨烯/单层-二硒化钼异质结中磁阻极性的调制
Nanoscale Res Lett. 2020 Jun 22;15(1):136. doi: 10.1186/s11671-020-03365-2.
9
One-dimensional hexagonal boron nitride conducting channel.一维六方氮化硼导电通道。
Sci Adv. 2020 Mar 6;6(10):eaay4958. doi: 10.1126/sciadv.aay4958. eCollection 2020 Mar.
10
Controlling the layer localization of gapless states in bilayer graphene with a gate voltage.通过栅极电压控制双层石墨烯中无隙态的层定位。
2d Mater. 2018;5(2). doi: 10.1088/2053-1583/aaa490.