Univ. Grenoble-Alpes, CEA, Leti, 38000 Grenoble, France.
Université Clermont Auvergne, Clermont Auvergne INP, CNRS, Institut Pascal, F-63000 Clermont-Ferrand, France.
Faraday Discuss. 2022 Aug 25;236(0):288-310. doi: 10.1039/d1fd00110h.
Photoelectron spectroscopy is a characterization technique which plays a key role in device technology, a field requiring, very often, a reliable and reproducible analysis of buried, critical interfaces. The recent advent of laboratory hard X-ray spectrometers opens new perspectives toward routine studies of technologically-relevant samples for the qualification of processes and materials. In this review, the status of hard X-ray photoelectron spectroscopy (HAXPES) implemented with chromium Kα excitation (5.414 keV) and applied to technological research in nanoelectronics is presented. After an account of the role of synchrotron HAXPES and the specific effects to care about at the practical level, different aspects are developed, first for illustrating the benefits of the technique through specific application cases in the field of resistive memories and power transistors. Then, we provide a status update on quantification in HAXPES, both from core-level intensities and inelastic background analysis. Finally, we present preliminary results in a novel analytical field, HAXPES, where a prototypical device is operated during the laboratory HAXPES experiment, opening up the possibility of unravelling the mechanisms occurring at buried interfaces and governing device operation.
光电子能谱是一种表征技术，在器件技术领域中起着关键作用，该领域通常需要对埋层、关键界面进行可靠且可重复的分析。最近，实验室硬 X 射线谱仪的出现为技术相关样品的常规研究开辟了新的前景，以对工艺和材料进行质量鉴定。在这篇综述中，介绍了采用铬 Kα 激发（5.414 keV）的硬 X 射线光电子能谱（HAXPES）的现状，并应用于纳米电子学的技术研究。在介绍同步加速器 HAXPES 的作用以及在实际层面需要注意的特殊效应之后，首先通过在电阻式存储器和功率晶体管领域的具体应用案例来说明该技术的优势。然后，我们提供了 HAXPES 中定量方面的最新进展，包括芯能级强度和非弹性背景分析。最后，我们提出了一个新的分析领域的初步结果，在该领域中，原型器件在实验室 HAXPES 实验中进行操作，这为揭示埋层界面处发生的、控制器件运行的机制提供了可能。
