更正：具有可调栅极整流特性的垂直WSe-MoSe p-n异质结构。
Correction: A vertical WSe-MoSe p-n heterostructure with tunable gate rectification.
作者信息
Liu Hailiang, Hussain Sajjad, Ali Asif, Naqvi Bilal Abbas, Vikraman Dhanasekaran, Jeong Woonyoung, Song Wooseok, An Ki-Seok, Jung Jongwan
机构信息
Graphene Research Institute, Sejong University Seoul 143-747 Republic of Korea
Institute of Nano and Advanced Materials Engineering, Sejong University Seoul 143-747 Republic of Korea.
出版信息
RSC Adv. 2018 Aug 13;8(50):28692. doi: 10.1039/c8ra90067a. eCollection 2018 Aug 7.
Abstract
[This corrects the article DOI: 10.1039/C8RA03398F.].
摘要
[本文更正了文章的数字对象标识符：10.1039/C8RA03398F。]
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