School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Science. 2022 May 13;376(6594):731-738. doi: 10.1126/science.abk3195. Epub 2022 May 12.
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO)-based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion-induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.
在非易失性和超越摩尔的电子器件方面的持续进步需要铁电体和半导体材料的集成。与原子层沉积兼容的基于氧化铪 (HfO) 的铁电体的出现开辟了有趣且有前景的研究途径。然而，在 HfO 中铁电性的起源和控制途径仍然是神秘的。我们证明局部氦 (He) 注入可以激活这些材料中的铁电性。分析了可能的竞争机制，包括 He 离子诱导的摩尔体积变化、空位重新分布、空位生成和空位迁移率的激活。这些发现揭示了该体系中铁电性的起源，并为纳米工程二元铁电体开辟了途径。
