Zhang Wen Di, Song Zi Zheng, Tang Shu Qi, Wei Jin Chen, Cheng Yan, Li Bing, Chen Shi You, Chen Zi Bin, Jiang An Quan
School of Microelectronics, Fudan University, Shanghai, China.
State Key Laboratory of Ultra-precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong, China.
Nat Commun. 2025 Mar 18;16(1):2679. doi: 10.1038/s41467-025-57963-8.
The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133-152 J/cm) and efficiencies (75-90%) that have been realized using relaxor ferroelectric thick films, low-permittivity interfacial layers in the ultrathin films have caused the overall permittivity to be one to two orders of magnitude lower than expected. However, innovative use of complementary metal-oxide-semiconductor-compatible HfO-based materials with high permittivities (~52) could enable integration of these capacitors into few-nanometre-scale devices. This study reports an ultrahigh dielectric permittivity of 921, stored charge density of 349 μC/cm, and energy density of 584 J/cm with nearly 100% efficiency within near-edge plasma-treated HfZrO thin-film capacitors when the Hf-based material's ferroelectricity disappears suddenly after polarization fatigue. The ultrahigh dielectric permittivity originates from a distorted orthorhombic phase with ordered oxygen vacancies that enables high-density integration of extremely scaled logic and memory devices for low-voltage applications.
能够存储大量电荷的不断缩小的静电电容器，已在高存储密度动态随机存取存储器和节能互补金属氧化物半导体器件中得到广泛应用。尽管使用弛豫铁电厚膜已实现了高储能密度（133 - 152 J/cm³）和效率（75 - 90%），但超薄膜中的低介电常数界面层导致整体介电常数比预期低一到两个数量级。然而，创新性地使用具有高介电常数（约52）的与互补金属氧化物半导体兼容的HfO基材料，可使这些电容器集成到几纳米尺度的器件中。本研究报告了在近边缘等离子体处理的HfZrO薄膜电容器中，当基于Hf的材料在极化疲劳后铁电性突然消失时，具有921的超高介电常数、349 μC/cm²的存储电荷密度和584 J/cm³的能量密度，且效率接近100%。这种超高介电常数源于具有有序氧空位的扭曲正交相，这使得能够为低压应用实现极小规模逻辑和存储器件的高密度集成。
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