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用于超级电容器的氮掺杂硫化钼分层纳米结构

Hierarchical nanostructures of nitrogen-doped molybdenum sulphide for supercapacitors.

作者信息

Kanade Chaitanya, Arbuj Sudhir, Kanade Kaluram, Kim Ki Seok, Yeom Geun Young, Kim Taesung, Kale Bharat

机构信息

Indian Institute of Science Education and Research, Pune (IISER Pune) Pashan Road Pune-411008 India.

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University Suwon 440-746 Korea.

出版信息

RSC Adv. 2018 Nov 27;8(69):39749-39755. doi: 10.1039/c8ra06660d. eCollection 2018 Nov 23.

Abstract

Flower-like nanostructures of molybdenum disulphide (MoS) have been effectively synthesised by the hydrothermal method and further doped with nitrogen using varying concentrations of urea. The formed hierarchical nanostructures are characterised by spectroscopy as well as electrochemical techniques. The structural analysis confirms the formation of a hexagonal MoS crystal structure. The existence of MoO/MoO/MoS composites is also observed after heating MoS with a lower urea concentration. Surface morphological analysis of all the prepared compositions shows the appearance of flower-like nanostructures formed by the stacking of 20-80 nanosheets to create individual flower petals. Nitrogen doping shows enhancement in the specific capacitance of MoS due to an increase in the electronic conductivity. Furthermore, the specific capacitance is enhanced due to the formation of an MoO/MoO/MoS composite. The highest specific capacitance calculated from the charge-discharge curve for nitrogen-doped MoS prepared using 1 : 1 (MoS : urea) weight ratio is observed at around 129 (F g) at 2 (A g) specific current. The nitrogen-doped MoS demonstrates almost four-fold enhancement in specific capacitance than pristine nano-shaped MoS.

摘要

通过水热法有效地合成了二硫化钼(MoS)的花状纳米结构,并使用不同浓度的尿素进一步进行氮掺杂。所形成的分级纳米结构通过光谱学以及电化学技术进行表征。结构分析证实形成了六方MoS晶体结构。在用较低浓度尿素加热MoS后,还观察到了MoO/MoO/MoS复合材料的存在。对所有制备的组合物进行表面形态分析,结果显示出由20 - 80个纳米片堆叠形成单个花瓣而构成的花状纳米结构。由于电子电导率的增加,氮掺杂使MoS的比电容有所提高。此外,由于形成了MoO/MoO/MoS复合材料,比电容进一步增强。在2(A g)的特定电流下,使用1∶1(MoS∶尿素)重量比制备的氮掺杂MoS的充放电曲线计算得出的最高比电容约为129(F g)。与原始纳米形状的MoS相比,氮掺杂的MoS的比电容几乎提高了四倍。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d051/9091326/83c6349271c9/c8ra06660d-f1.jpg

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